Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation

Fredrickson, J. E.; Waddell, C.N.; Spitzer, W. G.; Hubler, G. K.

doi:10.1063/1.93032

Cited by 85 publications

(14 citation statements)

References 12 publications

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“…The refraction index of the as-deposited material, measured at 1540 nm was about 2.6. This is a relatively high index value, very suitable for light confinement between a-SiO x <Er> and air, and agrees with literature for the same material obtained by different deposition techniques [37,38]. After co-deposition, the sample was thermally annealed in a N 2 atmosphere (3.0 l/min flux) at 400°C for 1 hour.…”

Section: Fabrication Of the Structuresupporting

confidence: 86%

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

Figueira¹,

Barea²,

Vallini³

et al. 2012

Opt. Express

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We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOx) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ~2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.

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Section: Fabrication Of the Structuresupporting

confidence: 86%

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

Figueira¹,

Barea²,

Vallini³

et al. 2012

Opt. Express

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“…For example, several studies report increased refractive index arising from ion implantation in diamond, 21,[28][29][30][31] silicon, [32][33][34][35] and germanium, 36 despite considerable volume expansion. In all cases, the increase is attributed to a change in the atomic bond polarizability.…”

mentioning

confidence: 99%

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

et al. 2016

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Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

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“…Ellipsometry was performed at 632.8 nm for the measurement of SiO 2 refraction index and thickness with a value of 1.46 and 1250 nm, respectively. 11,12 The film was 350 nm in thickness. The a-Si: H͗Er͘ films were prepared by rf sputtering codeposition on Si/ SiO 2 substrates.…”

Section: Sample Preparation Characterization and Microstructurementioning

confidence: 99%

Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonators

Figueira

Frateschi

2008

Journal of Applied Physics

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Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation

Abstract: Effects of rapid thermal anneal on refractive index and hydrogen content of plasmaenhanced chemical vapor deposited silicon nitride films Amorphous silicon produced by ion implantation: Effects of ion mass and thermal annealing

Cited by 85 publications

References 12 publications

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonators

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