Effects of the substrate misorientation on the structural and optoelectronic characteristics of tensile GaInP quantum well laser diode wafer

Lin, Tao; Lin, Nan; Cong, Xin; Zhong, Li; Qi, Qiong; Zhao, Yihao; Wang, Cuiluan; Guo, Enmin; Liu, Suping; Ma, Xiaoyu

doi:10.1016/j.jallcom.2016.07.112

Cited by 4 publications

(1 citation statement)

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“…However, the correlation between the structural and optical properties of InGaAs QWs and GaAs substrates with different misorientation angles has not yet been thoroughly investigated. Lin et al investigated the influence of a tilted substrate on the photoluminescence, mismatch, doping, thickness, and morphology of GaInP QWs and found that the 15 • substrate was a suitable choice for use in a red light waveband laser diode wafer [10]. Botha et al studied the influence of growth interruption and substrate misorientation on the optical and heterointerface properties; the use of the growth interruption technique during growth resulted in the 2 • substrate being preferred for the growth of InGaAs/GaAs QWs [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

Zeng

Song

et al. 2021

Applied Sciences

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InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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Section: Introductionmentioning

confidence: 99%