Effects of the physical properties of atomic layer deposition grown seeding layers on the preparation of ZnO nanowires

Ladanov, Mikhail; Algarin-Amaris, P; Villalba, Pedro; Emirov, Yusuf; Matthews, Garrett; Thomas, Sylvia; Ram, Manoj K.; Kumar, Ashok; Wang, Jing

doi:10.1016/j.jpcs.2013.05.026

Cited by 13 publications

(9 citation statements)

References 35 publications

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“…This allows for conformal coating of ultrahigh-aspect-ratio structures (>2000:1) . Over half of the periodic table can be deposited using this method. , Despite these advantages, there have been relatively few reports on the use of ALD to control the properties of heterogeneous interfaces in hierarchical nanomaterials, and the underlying structural and chemical relationships between the interfacial layers and resultant nanostructures have not been investigated in detail. − To this end, ALD provides a platform for both fundamental research on the mechanisms of heterogeneous nucleation and growth control through surface modifications, as well as a versatile manufacturing tool capable of creating complex integrated nanoscale systems that would be difficult to fabricate using traditional processes.…”

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confidence: 99%

Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

et al. 2015

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The ability to synthesize semiconductor nanowires with deterministic and tunable control of orientation and morphology on a wide range of substrates, while high precision and repeatability are maintained, is a challenge currently faced for the development of many nanoscale material systems. Here we show that atomic layer deposition (ALD) presents a reliable method of surface and interfacial modification to guide nanowire orientation on a variety of substrate materials and geometries, including high-aspect-ratio, three-dimensional templates. We demonstrate control of the orientation and geometric properties of hydrothermally grown single crystalline ZnO nanowires via the deposition of a ZnO seed layer by ALD. The crystallographic texture and roughness of the seed layer result in tunable preferred nanowire orientations and densities for identical hydrothermal growth conditions. The structural and chemical relationship between the ALD layers and nanowires was investigated with synchrotron X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy to elucidate the underlying mechanisms of orientation and morphology control. The resulting control parameters were utilized to produce hierarchical nanostructures with tunable properties on a wide range of substrates, including vertical micropillars, paper fibers, porous polymer membranes, and biological substrates. This illustrates the power of ALD for interfacial engineering of heterogeneous material systems at the nanoscale, to provide a highly controlled and scalable seeding method for bottom-up synthesis of integrated nanosystems. S emiconductor nanowires (NWs) represent a critical building block for nanoscale materials and systems owing to the novel optical, electronic, mechanical, thermal, and magnetic properties associated with a one-dimensional geometry. 1 A variety of synthesis approaches have been developed to form high-quality, single-crystalline NWs, including several bottom-up approaches based on solution or gas-phase processing. 1,2 These approaches have several potential advantages over subtractive processes, including a reduced number of processing steps and complexity, reduced raw material usage and cost, in situ doping, and the ability to create novel 3-D hierarchical and core−shell structures. 3−15 However, the ability to control the morphology and relative angular orientation of bottom-up NW arrays over large areas and on a variety of substrates that have different geometric, chemical, and crystallographic properties is a key challenge limiting our ability to manufacture integrated nanosystems composed of heterogeneous materials.As material systems continue to mature and gain complexity, methods are needed that can guide NW growth behavior on complex 3-D surfaces with deterministic and highly reproducible control. This process should be compatible with a wide range of substrate materials and should be arbitrarily scalable to facilitate manufacturing. To accomplish this, there are several typical methods of...

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confidence: 99%

Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

et al. 2015

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“…Description of the preparation conditions applied for samples (a)-(c) is given in the text and SEM micrographs are shown in Fig. 1 e.g., [26,27]), it is expected that the ZnO NR preferentially grow along the ZnO-(0001) direction of the wurtzite crystal structure following the crystal orientation of the ZnO nucleation crystal epitaxially. Therefore, a change in NR tilting also suggests a change in the ZnO nanodot crystal orientation with respect to the substrate surface (normal).…”

Section: Resultsmentioning

confidence: 99%

“…A critical step in the ZnO NR array growth is the NR nucleation which controls the density of NR as well as the NR tilting on the substrate [15,[22][23][24][25][26][27][28][29][30]. Moreover, the diameter of the NRs can be determined by the size of the nucleation sites [18,28,[31][32][33].…”

Section: Introductionmentioning

confidence: 99%

“…To decrease the NR density, porous templates consisting of insulating materials have been applied [34][35][36]. The NR tilting with respect to the substrate can be adjusted by changing the crystal orientation of the (ZnO) substrate/seed layer [22,[26][27][28]. To be attractive for industrial use, however, all preparation methods for ZnO NR growth require being cost-effective and also scalable to large areas including the layers used to tune the ZnO NR nucleation.…”

Section: Introductionmentioning

confidence: 99%

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ZnO and ZnS nanodots deposited by spray methods: A versatile tool for nucleation control in electrochemical ZnO nanorod array growth

Riedel

Aksünger

et al. 2015

Thin Solid Films

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“…除了反应物浓度、反应温度、反应时间等参数 [23][24] , 种子层厚度对于水热生长 ZnO 纳米棒阵列的形貌也有明显的影响 [25][26][27] 。对不使用种子层、使用厚度 5、15、50 nm 的 ZnO 薄膜种子层时, ZnO 的生长状况进行了研究, 结果如图 2 所示。不使用种子层时, 由于 ZnO 和 ZnCo 2 O 4 没有形成合适的晶格匹配 [13][14] , 因此只有少量 ZnO 亚微米棒在 ZnCo 2 O 4 纳米片表面生长, 没有形成连续的 ZnO 纳米棒阵列, 如图 2(a~b)。种子层厚度为 5 nm 时, 获得了取向一致、密度适中的 ZnO 纳米棒阵列, 如图 2(c~d)。种子层厚度为 15 nm 时, ZnO 纳米棒的取向分布范围变宽, 如图 2(e~f)。这可能是由该种子层表面的 ZnO 颗粒朝向分布范围变宽所造成的 [28] 。种子层厚度为 50 nm 时, ZnO 纳米棒阵列具有很大的阵列密度, 部分区域接近排布为连续的薄膜, 如图 2(g~h)。阵列式的形貌对入射光有限制传播和增加吸收的作用 [7,9] [29] , 计算得到的器件响应度如图 4(d)所示。器件的紫外-可见判别比 (R 300 nm /R 400 nm ) [30]…”

Section: Zno 纳米棒阵列的形貌unclassified

Preparation and Photodetection Property of ZnO Nanorods/ZnCo2O4 Nanoplates Heterojunction

Zhang¹,

Fang²

2019

Journal of Inorganic Materials

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Heterojunction-type nanostructures based on ZnO nanomaterials are one of the important candidates for constructing high-performance ultraviolet (UV) photodetectors. In this work, a novel ZnO nanorods/ZnCo 2 O 4 nanoplates heterojunction was designed and prepared, and the electrical properties and photodetection properties of the as-prepared heterojunction were investigated. ZnCo 2 O 4 nanoplates were constructed into uniform thin film on ITO glass substrate using oil/water interface self-assembly. Next, ZnO nanorod arrays with uniform orientation and proper density were grown on ZnCo 2 O 4 nanoplates thin film using hydrothermal method with the help from ZnO seed layer. As a result, high-quality ZnO nanorods/ZnCo 2 O 4 nanoplates heterojunction was achieved. This heterojunction has a high rectification ratio of 673.7. Under reverse bias, this heterojunction has a light-dark current ration of more than two orders of magnitude. The UV-visible rejection ratio of this heterojunction is 29.4, which indicates its selective detection of UV light. These results effectively prove the potential of this ZnO nanorods/ZnCo 2 O 4 nanoplates heterojunction in constructing high-performance UV photodetectors.

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Effects of the physical properties of atomic layer deposition grown seeding layers on the preparation of ZnO nanowires

Cited by 13 publications

References 35 publications

Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

ZnO and ZnS nanodots deposited by spray methods: A versatile tool for nucleation control in electrochemical ZnO nanorod array growth

Preparation and Photodetection Property of ZnO Nanorods/ZnCo2O4 Nanoplates Heterojunction

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