Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Kim, Moon-Seok; Hwang, Young Hwan; Kim, Sungho; Guo, Zheng; Moon, Dong‐Il; Choi, Ji‐Min; Seol, Myeong‐Lok; Bae, Byeong‐Soo; Choi, Yang‐Kyu

doi:10.1063/1.4770073

Cited by 61 publications

(50 citation statements)

References 25 publications

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“…At this low voltage region, the trap sites of the Cs 3 Bi 2 I 9 are partially filled due to the weak injection of electrons and thus the Ohmic behavior is observed. As shown in Figure c, with the voltage increases, the current suddenly rises with a relationship of I ∝ V 2 , which fits well with the classical trap‐controlled SCLC mechanism described by Equation

J = \frac{9}{8} n ε μ (\frac{V^{2}}{d^{3}})

…”

supporting

confidence: 77%

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Zhang

Miao

et al. 2017

Adv Materials Inter

100

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J = \frac{9}{8} n ε μ (\frac{V^{2}}{d^{3}})

…”

supporting

confidence: 77%

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Zhang

Miao

et al. 2017

Adv Materials Inter

100

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“…Apparently, this a-IGZO film with high electron concentration is not suitable for TFT applications. The electrons in the a-IGZO layer are mainly caused by oxygen vacancies (V O ) [63][64][65]. The insufficient oxygen content in the chamber during the deposition process would lead to abundant V O and leads to excess electrons.…”

Section: Bmentioning

confidence: 99%

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Hsu

Chu

Sun

et al. 2016

J. Display Technol.

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Abstract-In this work, low temperature fabrication of an amorphous InGaZnO thin film transistor (a-IGZO TFT) was demonstrated. The maximum process temperature was 200 °C. The gate dielectric was a sol-gel SiO 2 film while the channel layer was a sputtered a-IGZO semiconductor. The optimal sol-gel film for gate dielectric application was obtained by considering effects of surfactant, solvent, plasma treatment and curing process on the film characteristics. The reasons for leakage current variations of the sol-gel films prepared with different conditions were examined by a scanning electron microscope and Fourier-transform infrared analysis. The leakage current mechanism of the optimal sol-gel SiO 2 film was found to be dominated by Ohmic conduction. The characteristics of a-IGZO layers deposited with oxygen flow rates of 0-3 sccm were investigated. By integrating the optimal sol-gel SiO 2 dielectric and the sputtered a-IGZO layer, we successfully fabricated the TFT with a field effect mobility of 6.4 cm 2 /Vs. The interface trap density between the sol-gel SiO 2 and the a-IGZO layer was found to be 9.2 × 10 11 cm -2 eV -1 .

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“…Additionally, because the conductivity of MO semiconductors can be affected by electron–hole pairs generated by photo‐irradiation and charge trapping/detrapping induced by chemisorbed molecules, MO semiconductors are promising sensing materials for photodetectors, gas sensors, and biochemical sensors . Furthermore, MO‐based resistive random access memories (RRAMs) have garnered much attention in recent years because of their low power consumption and high speed . The memory effect was explained by oxygen ion migration in the MOs, which strongly relies on the concentration of oxygen vacancies in the MOs.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

2018

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Due to their transparency and tunable electrical, optical, and magnetic properties, metal oxide thin films and structures have many applications in electro-optical devices. In recent years, solution processing combined with direct-patterning techniques such as micro-/nanomolding, inkjet printing, e-jet printing, e-beam writing, and photopatterning has drawn much attention because of the inexpensive and simple fabrication process that avoids using capital-intensive vacuum deposition systems and chemical etching. Furthermore, practical applications of solution direct-patterning techniques with metal oxide structures are demonstrated in thin-film transistors and biochemical sensors on a wide range of substrates. Since direct-patterning techniques enable low-cost fabrication of nanoscale metal oxide structures, these methods are expected to accelerate the development of nanoscale devices and systems based on metal oxide components in important application fields such as flexible electronics, the Internet of Things (IoT), and human health monitoring. Here, a review of the fabrication procedures, advantages, limitations, and applications of the main direct-patterning methods for making metal oxide structures is presented. The goal is to highlight the examples with the most promising perspective from the recent literature.

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Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Cited by 61 publications

References 25 publications

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

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Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Cited by 61 publications

References 25 publications

Ultrathin Cs3Bi2I9 Nanosheets as an Electronic Memory Material for Flexible Memristors

Ultrathin Cs3Bi2I9 Nanosheets as an Electronic Memory Material for Flexible Memristors

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO2Gate Dielectric

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

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Product

Resources

About

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Ultrathin Cs₃Bi₂I₉ Nanosheets as an Electronic Memory Material for Flexible Memristors

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric