Effects of the narrow band gap on the properties of InN

Wu, Junqiao; Walukiewicz, W.; Shan, W.; Yu, K. M.; Ager, Joel W.; Häller, E. E.; Lu, Hai; Schaff, William J.

doi:10.1103/physrevb.66.201403

Cited by 413 publications

(289 citation statements)

References 19 publications

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“…This new small gap for InN was further supported by recent ultrafast differential transmission measurements performed on MBE-grown material [5]. Studies of InN samples with free electron concentrations spanning three orders of magnitude, up to 10 21 cm -3 , have revealed a large Burstein-Moss shift in the observed optical absorption edge from 0.7 eV to 1.7 eV [6]. This effect provides an explanation for the wide range of InN band gaps reported previously.…”

supporting

confidence: 51%

On the crystalline structure, stoichiometry and band gap of InN thin films

Liliental‐Weber

Walukiewicz

et al. 2005

Applied Physics Letters

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108

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Detailed transmission electron microscopy (TEM), x-ray diffraction (XRD), and optical characterization of a variety of InN thin films grown by molecular beam epitaxy under both optimized and non-optimized conditions is reported. Optical characterization by absorption and photoluminescence confirms that the band gap of single crystalline and polycrystalline wurtzite InN is 0.70±0.05 eV. Films grown under optimized conditions with a AlN nucleation layer and a GaN buffer layer are stoichiometric, single crystalline wurtzite structure with dislocation densities not exceeding mid-10 10 cm -2 . Non-optimal films can be poly-crystalline and display an XRD diffraction feature at 2θ ≈ 33º; this feature has been attributed by others to the presence of metallic In clusters. Careful indexing of wide angle XRD scans and selected area diffraction patterns shows that this peak is in fact due to the presence of polycrystalline InN grains; no evidence of metallic In clusters was found in any of the studied samples.

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supporting

confidence: 51%

On the crystalline structure, stoichiometry and band gap of InN thin films

Liliental‐Weber

Walukiewicz

et al. 2005

Applied Physics Letters

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108

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“…At the higher excitation power, the QCSE was completely screened and the Burstein-Moss effect started to dominate the blue-shift of PL emission peak. 25 Meanwhile, large amount of carriers were pushed to higher energy states due to the fact that all states close to the conduction band are populated, so the FWHM of PL emission peak increased. The energy shift of PL emission peak of sample A and B before the FWHM raising were 8.0 and 15.5 meV, respectively.…”

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confidence: 99%

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Chen

2016

AIP Advances

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“…InN, after being discovered of a narrow bandgap (E g ∼ 0.65 − 1 eV) [1][2][3][4][5][6][7][8][9][10][11][12][13][14] and predicted to possess the largest electron mobility among group-III nitrides (∼ 4400 cm 2 ·V −1 ·s −1 at 300 K), 15 has emerged as a highly promising material for infrared photodetectors and lasers, solar cells, ultrahigh-speed transistors, and sensors. [16][17][18] To date, however, the practical device applications of InN-based materials have been severely limited by the presence of extremely large residual electron density and the uncontrolled surface charge properties, as well as the difficulty in achieving p-type conductivity.…”

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confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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Effects of the narrow band gap on the properties of InN

Cited by 413 publications

References 19 publications

On the crystalline structure, stoichiometry and band gap of InN thin films

On the crystalline structure, stoichiometry and band gap of InN thin films

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

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