Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells

Diouf, Djicknoum; Kleider, Jean‐Paul; Desrues, T.; Ribeyron, P.J.

doi:10.1016/j.egypro.2010.07.011

Cited by 22 publications

(11 citation statements)

References 10 publications

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“…Eventually, our findings are not in direct contradiction with earlier published results in which the presence of an FSF was indicated as a requirement 1) for efficient lateral transport of the photogenerated carriers and 2) for low surface recombination velocities [53], [55]. Both mentioned effects indeed depend on the passivation quality provided in absence of the front n-type a-Si:H layer, through the substrate injection level in case 1 and directly in case 2.…”

Section: High-j Sc Interdigitated Back-contacted Silicon Heterojuncontrasting

confidence: 57%

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Paviet‐Salomon

Tomasi

Descoeudres

et al. 2015

IEEE J. Photovoltaics

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Abstract-We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at the front side of our solar cells, aiming at increasing the short-circuit current density in actual devices. Applying these rules, we processed a back-contacted silicon heterojunction solar cell featuring a short-circuit current density of 40.9 mA/cm 2 and a conversion efficiency of 22.0%. Finally, we show that further progress will require addressing the optical losses occurring at the rear electrodes of the back-contacted devices.

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Section: High-j Sc Interdigitated Back-contacted Silicon Heterojuncontrasting

confidence: 57%

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Paviet‐Salomon

Tomasi

Descoeudres

et al. 2015

IEEE J. Photovoltaics

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“…As far as the RE-SHJ sensitivity to front-side passivation is concerned, such cells behave like rear contacted cells [25]. Up to now, our best cell results have been achieved with a front (i)a-Si:H/(n)aSi:H layer stack of 4.5 nm each.…”

Section: B Bulk A-si:h Defectsmentioning

confidence: 95%

Role of the Front Electron Collector in Rear Emitter Silicon Heterojunction Solar Cells

Varache

Aguila

Valla

et al. 2015

IEEE J. Photovoltaics

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Front electron collectors in rear emitter hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) solar cells are comprehensively investigated with the objective of increasing cell power conversion efficiency. Since such cells benefit from the lateral electron conductivity of the n-doped substrate, the electrical constraint on the front transparent conductive oxide (TCO) layer is relaxed. However, cell improvement is only expected if the front side is optimized. Here, we present our understanding of recombination losses in the front amorphous silicon layers and at the a-Si:H/c-Si interface, which determine the short-circuit current. In addition, we show how the TCO/(n + i)a-Si:H/(n)c-Si contact has to be finely engineered to minimize the resistance for electrons to be extracted. Both points are addressed through experimental and simulation works.

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“…Thickness dsio2 = 5 nm [11] Emitter finger (a-Si:H p + ) width WBSF = 500 μm [2] Thickness dBSF = 10 μm carrier concentration NAaSi = 8 × 10 18 cm -3 [12] Energy band gap EgaSi = 1.7 eV [3] Electron affinity χaSi = 3.8 eV [3] Effective density of state conduction band edge NCaSi = 4.5 × 10 21 cm -3 [13] Effective density of state valance band edge NVaSi = 6.4 × 10 21 cm -3 [13] Drift mobility of electron μnaSi = 1 cm 2 /Vs [13] Drift mobility of hole μpaSi = 0.01 cm 2 /Vs [13] electron lifetime τnaSi = 900μs [14] Back surface recombination velocity SBSF = 10 cm/s [15] BSF finger (a-Si:H n + )/FSF2 width Wemitter = 150 μm [2] Thickness demitter = 6 μm carrier concentration NDaSi = 5 × 10 19 cm -3 [12] Energy band gap EgaSi = 1.72 eV [3] Electron affinity χaSi = 3.7 eV [3] Relative permittivity εcSi = 6 [12] Effective density of state conduction band edge NCaSi = 4.5 × 10 21 cm -3 [13] Effective density of state valance band edge NVaSi = 6.4 × 10 21 cm -3 [13] Drift mobility of electron μnaSi = 1 cm 2 /Vs [13] Drift mobility of hole μpaSi = 0.01 cm 2 /Vs [13] hole lifetime τpaSi = 700μs [14] Back surface recombination velocity Semitter = 10 cm/s [15] c-Si n-type substrate (bulk)…”

Section: Introductionmentioning

confidence: 99%

Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell

Dasgupta¹,

Mondal

Ray

et al. 2021

Preprint

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In this paper we have proposed the design and fabrication of a novel hetero junction SIS front surface and interdigitated back contact solar cell. We have approximated the performance parameters and loss analysis of the proposed solar cell by using MATLAB software programming. Many groups of scientists have reported the experimental analysis of a-Si back contact interdigitated solar cell in different studies. Many silicon hetero junction solar cell design and results have been reported with some promising efficiency in last few decades. In this study a high life time(~2 ms) n-Si substrate was considered so that a sufficient amount of light generated career can reach to the interdigitated layer to get absorbed. The availability of the careers at the interdigitated back surface was further enhanced by considering and high-low junction at the front surface created by a ZnO n+ layer at the front surface. A very thin layer of thermally generated insulator SiO2 was considered in between ZnO and n-Si. This layer improves the detrimental effect of interface defects. This is the first time we have theorized interdigitated back contact (IBC) solar cell using metal oxide semiconductors layer deposition avoiding the expensive and complicated doping and diffusion process. In general a high concentration n+ layer is doped to create the high-low junction at front to accelerate the carriers to the back junctions. We are proposing a cost effective thermal deposition of SiO2 layer followed by sol-gel ZnO layer deposition which serves the same purpose of an n+ layer by introducing an SIS junction potential at front. The interdigitated back surface was designed with subsequent n+ a:Si and p+ a:Si vertical junctions.

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Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells

Cited by 22 publications

References 10 publications

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Role of the Front Electron Collector in Rear Emitter Silicon Heterojunction Solar Cells

Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell

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Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells

Cited by 22 publications

References 10 publications

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Role of the Front Electron Collector in Rear Emitter Silicon Heterojunction Solar Cells

Mathematical Modelling of a Novel Hetero-junction SIS&nbsp;Front Surface and Interdigitated Back Contact Solar Cell

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Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell