2015
DOI: 10.1007/s12613-015-1049-3
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Effects of the flow rate of hydrogen on the growth of graphene

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Cited by 12 publications
(7 citation statements)
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“…In addition to being affected by atmospheric exposure, the surface conductivity of H-terminated diamond films is also affected by the treatment conditions, as also observed in the case of graphene [9]. Generally, H atoms produced by microwave (MW) plasma or by thermal dissociation resulting from hot filament (HF) have been used to hydrogenate diamond surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to being affected by atmospheric exposure, the surface conductivity of H-terminated diamond films is also affected by the treatment conditions, as also observed in the case of graphene [9]. Generally, H atoms produced by microwave (MW) plasma or by thermal dissociation resulting from hot filament (HF) have been used to hydrogenate diamond surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, as the number of carbon species on the surface of the base material increases, the edge diffusion rate of carbon atoms on the edge is restrained and does not fully reach the energy optimal position, thus producing the dendritic morphology. Therefore, we can conclude that high partial pressures of hydrogen are favorable for the formation of hexagonal graphene [11,[30][31][32][33].…”
Section: Symmetric and Asymmetric Graphene Morphologiesmentioning
confidence: 88%
“…37,97 This degree of shape control can be achieved through precise tuning of growth parameters. 64,[98][99][100][101] By adjusting the partial pressure of the precursor gases one can affect all the intermediate steps of the growth process, such as the decomposition of the hydrocarbon source as well as the deposition and diffusion of carbon atoms. Different morphologies of graphene flakes can be accurately tailored by tweaking the ratio of Ar : H 2 , which leads to precisely tuned graphene edges alternating between negative or positive curvature.…”
Section: Liquid Coppermentioning
confidence: 99%