Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Song, Yiyun; Zhang, Yan; Jian-min, Zhang; Lu, Dao-Bang

doi:10.1016/j.apsusc.2010.04.009

Cited by 118 publications

(54 citation statements)

References 27 publications

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“…In contrast, the band gap of a GNR scales inversely with the channel width 22,24 , and it has been proved by experiment 25 . Results similar to those in GNRs are also observed in silicene nanoribbons 59 .…”

Section: A Electronic Band Structuressupporting

confidence: 71%

Tunable electronic band structures and zero-energy modes of heterosubstrate-induced graphene superlattices

Fan

Huang

et al. 2016

Phys. Rev. B

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We propose a tunable electronic band gap and zero-energy modes in periodic heterosubstrateinduced graphene superlattices. Interestingly, there is an approximate linear relation between the band gap and the proportion of an inhomogeneous substrate (i.e., percentages of different components) in the proposed superlattice, and the effect of structural disorder on the relation is discussed. In an inhomogeneous substrate with equal widths, zero-energy states emerge in the form of Dirac points by using asymmetric potentials, and the positions of Dirac points are addressed analytically. Further, the Dirac point exists at k = 0 only for specific potentials; every time it appears, the group velocity vanishes in the ky direction, and the resonance occurs. For general cases of an inhomogeneous substrate with unequal widths, part of the zero-energy states are described analytically, and differently, they are not always Dirac points. Our prediction may be realized on a heterosubstrate such as SiO2/BN.

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Section: A Electronic Band Structuressupporting

confidence: 71%

Tunable electronic band structures and zero-energy modes of heterosubstrate-induced graphene superlattices

Fan

Huang

et al. 2016

Phys. Rev. B

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“…The electronic properties of the edge states of silicene, germanene and stanene nanoribbons (SiNRs, GeNRs, SnNRs) with and without hydrogen termination have also been studied using a single-orbital tight-binding model [4,7] and first-principles calculations [37][38][39][40][41] by many groups. Although the single-orbital model can reproduce the bulk energy dispersion [42], it has not yet been clarified whether the single-orbital model can really express the various types of edge states with hydrogen termination [4].…”

Section: Introductionmentioning

confidence: 99%

Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

Hattori¹,

Tanaya²,

Yada³

et al. 2017

J. Phys.: Condens. Matter

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Abstract.We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multiorbital tight-binding model. Since the low buckled structures are crucial for these materials, both the π and σ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dispersion of helical edge states is nonlinear, similar to that obtained by first-principles calculations. On the other hand, the dispersion derived from the single-orbital tight-binding model is always linear. Therefore, we find that the non-linearity comes from the multi-orbital effects, and accurate results cannot be obtained by the single-orbital model but can be obtained by the multi-orbital tight-binding model. We show that the multi-orbital model is essential for correctly understanding the dispersion of the edge states in tetragen nanoribbons with a low buckled geometry.

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“…Recently, Silicene nanoribbon also has been studied [17,18,[35][36][37][38][39][40][41][42][43] which exhibits another advantage of Silicene comparing with the Graphene: the Silicene nanoribbons edges do not reveal oxygen reactivity [44,45]. In addition, sp 2 -like hybridization of the silicon valence orbitals could be obtained in the Silicene nanoribbons [46].…”

Section: Introductionmentioning

confidence: 99%

Electrical Transport Model of Silicene as a Channel of Field Effect Transistor

Sadeghi¹

2014

j. nanosci. nanotech.

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Abstract-The analytical electrical transport model of the Silicene, a single layer of sp 3 bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.

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Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Cited by 118 publications

References 27 publications

Tunable electronic band structures and zero-energy modes of heterosubstrate-induced graphene superlattices

Tunable electronic band structures and zero-energy modes of heterosubstrate-induced graphene superlattices

Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

Electrical Transport Model of Silicene as a Channel of Field Effect Transistor

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