Effects of the Chelating Agent on the Fabrication of SBT Thin Films: Part II. Microstructural Properties

Frattini, A.; Machado, R.; Santiago, M. L.; Pellegri, N.; Stachiotti, M. G.; Bolmaro, R.E.; Sanctis, O. de

doi:10.1080/00150190600689209

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…Evenmore, we showed recently that, in comparison with amine compounds, the utilization of acetoin as chelating agent in the preparation of SBT thin films produces the elimination of residual organic compounds at a lower temperature, an earlier onset of crystallization in a narrower temperature range and no segregation of metallic bismuth. The derived films presented a good microstructure [27,28]. For that reason, the present route for the synthesis of PMN-PT thin films is based on the utilization of acetoin as chelating agent.…”

Section: Methodsmentioning

confidence: 99%

Synthesis and Characterization of PMN-PT Thin Films Prepared by a New Chemical Route

et al. 2008

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Thin films of lead magnesium niobate-lead titanate (PMN-PT) have been synthesized by a new and simple chemical solution deposition route, using Acetoin (3-Hydroxy 2-butanone) as chelating agent and methanol as solvent. The starting materials were Niobium ethoxide, Titanium butoxide, Magnesium ethoxide and Lead acetate. The films were deposited on Pt/Ti/SiO 2 /Si substrates by spin-coating. By a multilayer process, homogenous and crack-free films with thickness up to 1 μm were obtained. The microstructure and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy (AFM) techniques. Films with a predominant perovskite phase and average grain size of ∼200 nm were obtained. The dielectric and ferroelectric properties are reported.

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Section: Methodsmentioning

confidence: 99%

Synthesis and Characterization of PMN-PT Thin Films Prepared by a New Chemical Route

et al. 2008

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“…Chemical Solution Deposition (CSD) techniques are interesting routes for the evaluation of new materials and novel strategies due to their versatility, simplicity and low temperature material synthesis [3]. Recently, we reported a stable and simple chemical route for the fabrication of SBT powders [4] and thin films [5,6] using non-hydrolyzing precursors of bismuth, strontium and tantalum alkoxides as starting materials. The utilization of acetoin, one of the Hydroxyketones, as chelating agent produced a transformation path amorphous→ fluorite → perovskite with increasing temperature without segregation of transient bismuth or appearance of secondary phases.…”

Section: Introductionmentioning

confidence: 99%

Oxygen ion implantation in Strontium Bismuth Tantalate thin films

Rico¹,

Stachiotti²,

Pellegri³

et al. 2006

Braz. J. Phys.

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Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the development of non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have a critical problem: a high processing temperature (>700 o C) is required for the crystallization of the perovskite phase. The thermal evolution of the SBT films prepared by Chemical Solution Deposition (CSD) techniques showed the formation of an intermediate oxygen-deficient fluorite phase at ∼550 o C. The SBT perovskite phase crystallizes at higher temperatures. To favor an earlier perovskite crystallization, SBT thin films were implanted with oxygen ions pulses produced by a Plasma Focus (1 kJ). The samples were annealed at different temperatures in oxygen atmosphere and characterized by GI-XRD and Atomic Force Microscopy techniques. It was found that oxygen addition into the SBT structure promotes a better crystallization of the perovskite phase.

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