2010
DOI: 10.1016/j.solmat.2009.11.003
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Effects of the buffer layer inserted between the transparent conductive oxide anode and the organic electron donor

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Cited by 55 publications
(40 citation statements)
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“…Indium tin oxide (ITO) is commonly used as transparent conductive anode. In order to increase the anode work function, which is necessary for efficient hole collection, the ITO surface is subjected to specific treatments, such as oxygen plasma, or coated with a suitable anode buffer layer [16]. Metal, such as gold [17], but also transition metal oxides [18], such as tungsten oxide [19], molybdenum oxide [20] and nickel oxide…”
Section: Introductionmentioning
confidence: 99%
“…Indium tin oxide (ITO) is commonly used as transparent conductive anode. In order to increase the anode work function, which is necessary for efficient hole collection, the ITO surface is subjected to specific treatments, such as oxygen plasma, or coated with a suitable anode buffer layer [16]. Metal, such as gold [17], but also transition metal oxides [18], such as tungsten oxide [19], molybdenum oxide [20] and nickel oxide…”
Section: Introductionmentioning
confidence: 99%
“…Other transition metal oxide (WO 3 , V 2 O 5 , NiO) have been probed as efficient ABL. Although such interface improvement has been often carried out [8,[23][24][25][26], the operation mechanism of these ABL is still in debate. The typical values which characterize the properties of the MoO 3 are: The work function, MoO3 , the top of the valence band, VB, which is the ionisation potential, IP, the bottom of the conduction band, BC, which is the electronic affinity (EA).…”
Section: Discussionmentioning
confidence: 99%
“…Therefore a lot of works have been dedicated at the improvement of the inte rface organic acceptor/cathode. The introduction of a thin anode buffer layer (ABL) between the ITO and the ED induces a significant improvement of the device efficiency [ 8]. For instance, we have shown that Au [ 9] and MoO x [10] allow achieving this goal, by simple vacuum deposition of an ultra -thin gold film or of a thin MoO x film when CuPc is the ED.…”
Section: Introductionmentioning
confidence: 99%
“…Research over the last few years indicates that buffer layers, either inorganic such as MoO 3 , WO 3 , V 2 O 5 , ZnO, LiF or organic, like PEDOT:PSS or BCP, with thicknesses usually less than 20 nm [1][2][3][4][5][6][7] can have beneficial effects on * E-mail: ryszard@mif.pg.gda.pl interface properties. A layer of transition-element oxide (with a thickness of a few nm) incorporated on an anode increases the flux of holes injected into (or extracted from) active organic layers [1][2][3][4][6][7][8]. Additionally a layer of LiF (1 nm) or BCP (10 nm) incorporated on a cathode increases the injection of electrons [1,7].…”
Section: Introductionmentioning
confidence: 99%