2012
DOI: 10.7498/aps.61.168101
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Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film

Abstract: The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, … Show more

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