Effects of the annealing process on the structure and valence state of vanadium oxide thin films

Li, Yuanbao; Liu, Juncheng; Wang, Danping; Pan, Guangyou; Dang, Yuanyuan

doi:10.1016/j.materresbull.2017.12.028

Cited by 15 publications

(6 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The peak centered at 530 eV comes from the O1s core level (Tehrani et al., 2007, Guo et al., 2014, Ohno et al., 2001). The other two peaks positioned at 517 and 524 eV are from the V2p 3/2 and V2p 1/2 orbitals, respectively (Li et al., 2018). Interestingly, the V2p signals completely disappear in SSP PEDOT, which means no oxidant residue is left in the PEDOT film.…”

Section: Resultsmentioning

confidence: 99%

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

et al. 2019

View full text Add to dashboard Cite

SummaryVarious in situ synthesis methods have been developed for the polymerization of 3,4-ethylenedioxythiophene monomers, such as electropolymerization, oxidative chemical vapor deposition, and vapor phase polymerization. Meeting industrial requirements through these techniques has, however, proven challenging. Here, we introduce an alternative method to fabricate highly conductive poly(3,4-ethylenedioxythiophene) (PEDOT) films in situ by solution means. The process involves sequential deposition of oxidants (V2O5 in this case) and monomers. Excess reactants and by-products can be completely removed from the PEDOT film by MeOH rinsing. The obtained PEDOT films possess good crystallinity and high doping level, with carrier concentration three orders of magnitude higher than that of the commercial product (PH1000, Heraeus GmbH). The electrical conductivity of the as-cast PEDOT film reaches up to 1,420 S/cm. In addition, this method is fully compatible with large-scale printing techniques. These PEDOT conducting films enable the realization of flexible touch sensors, which demonstrate superior flexibility and sensitivity.

show abstract

Section: Resultsmentioning

confidence: 99%

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The two peaks located at 519.42 and 518.52 eV correspond to Ga LMM and V 5+ 2p 3/2 , respectively. 46,47 Moreover, the valence state of the V element in the 1.00 mol% V-doped β-Ga 2 O 3 single crystal remained unchanged and still maintained a +5 valence. It is reported that V-doped β-Ga 2 O 3 films contain V 5+ and V 4+ ions, and V 5+ ions accounted for a high proportion.…”

Section: Xps Analysismentioning

confidence: 99%

Controllability of β-Ga₂O₃ single crystal conductivity by V doping

Han

Chen

et al. 2022

CrystEngComm

View full text Add to dashboard Cite

show abstract

“…7,8) VOx thin film process using sputtering conducts annealing for 0.5-2 h [9][10][11][12] and sol-gel process performs annealing for 2-6 h that is relatively longer. [13][14][15] Soda-lime was selected for the substrate to assist in the observation of film color changes. A nonoxidized VOx film is blue-black in color and exhibits a pale yellow color after annealing in an O 2 atmosphere.…”

Section: Sputtering and Annealing Of Vox Thin Filmsmentioning

confidence: 99%

Annealing temperature effect on the temperature coefficient of resistance for vanadium oxide (VOx) thin films as bolometer materials

Lee

Kim

Jung

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Vanadium oxides (VOx) are representative materials with a high temperature coefficient of resistance (TCR); however, VOx films can have complex phase structures that are dependent on their fabrication method. While past research has focused on the TCR behavior of VOx thin films, this study investigates the TCR of VOx thin films annealed at different temperatures as well as focuses on the relation between the VOx phase, surface morphology, sheet resistance, and TCR. VOx thin films were deposited via radio-frequency magnetron sputtering and annealed at 150°C–500°C in 20% O2. Alongside morphological changes, the deposited VOx thin films exhibited phase changes from V2O5 to VO2 with increasing annealing temperature. The VOx thin films annealed at 300°C and 330°C showed the lowest and highest average TCR of 1.25%/°C and 3.34%/°C, respectively. Furthermore, a bolometer fabricated using the higher-TCR film showed more than 5-fold infrared responsivity under the same infrared intensity.

show abstract

Effects of the annealing process on the structure and valence state of vanadium oxide thin films

Cited by 15 publications

References 37 publications

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

Controllability of β-Ga₂O₃ single crystal conductivity by V doping

Annealing temperature effect on the temperature coefficient of resistance for vanadium oxide (VOx) thin films as bolometer materials

Contact Info

Product

Resources

About

Effects of the annealing process on the structure and valence state of vanadium oxide thin films

Cited by 15 publications

References 37 publications

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

Sequential Solution Polymerization of Poly(3,4-ethylenedioxythiophene) Using V2O5 as Oxidant for Flexible Touch Sensors

Controllability of β-Ga2O3 single crystal conductivity by V doping

Annealing temperature effect on the temperature coefficient of resistance for vanadium oxide (VOx) thin films as bolometer materials

Contact Info

Product

Resources

About

Controllability of β-Ga₂O₃ single crystal conductivity by V doping