Effects of the annealing environment on green luminescence of ZnO thin films

Hsieh, Po Tsung; Chin, Huai Shan; Chang, Ping; Wang, Chih–Ming; Chen, Ying Chung; Houng, Mau Phon

doi:10.1016/j.physb.2010.03.021

Cited by 22 publications

(11 citation statements)

References 24 publications

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“…The obtained surface morphologies of AlN thin films appeared to be dense with smooth surfaces and strongly textured columnar structures. As is believed, hexagonal crystals exhibit piezoelectricity of unity with a (002) preferred orientation [20,21].…”

Section: Structural and Morphological Properties Of Aln Thinmentioning

confidence: 84%

Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

Shih

Chen

Chang

et al. 2014

Journal of Nanomaterials

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High-frequency Rayleigh-mode surface acoustic wave (SAW) devices were fabricated for 4G mobile telecommunications. The RF magnetron sputtering method was adopted to grow piezoelectric aluminum nitride (AlN) thin films on the Si3N4/Si substrates. The influence of sputtering parameters on the crystalline characteristics of AlN thin films was investigated. The interdigital transducer electrodes (IDTs) of aluminum (Al) were then fabricated onto the AlN surfaces by using the electron beam (e-beam) direct write lithography method to form the Al/AlN/Si3N4/Si structured SAW devices. The Al electrodes were adopted owing to its low resistivity, low cost, and low density of the material. For 4G applications in mobile telecommunications, the line widths of 937 nm, 750 nm, 562 nm, and 375 nm of IDTs were designed. Preferred orientation and crystalline properties of AlN thin films were determined by X-ray diffraction using a Siemens XRD-8 with CuKαradiation. Additionally, the cross-sectional images of AlN thin films were obtained by scanning electron microscope. Finally, the frequency responses of high-frequency SAW devices were measured using the E5071C network analyzer. The center frequencies of the high-frequency Rayleigh-mode SAW devices of 1.36 GHz, 1.81 GHz, 2.37 GHz, and 3.74 GHz are obtained. This study demonstrates that the proposed processing method significantly contributes to high-frequency SAW devices for wireless communications.

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Section: Structural and Morphological Properties Of Aln Thinmentioning

confidence: 84%

Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

Shih

Chen

Chang

et al. 2014

Journal of Nanomaterials

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“…Similar behavior with annealing condition has also been reported in published literature. 14,17,18 FESEM micrographs of all ZnO thin films produced in this work are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Improving the H2 Gas Sensitivity of ZnO Thin Films by Modifying the Annealing Conditions

Khojier

Savaloni

2015

Journal of Elec Materi

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This paper explains the influence of annealing conditions on the sensing properties of ZnO thin films that can be used for the development of H 2 gas sensors. Zn thin films were deposited by the e-beam deposition technique and subsequently annealed using different temperatures (400°C and 500°C), times (30 min and 60 min), and environments (air and oxygen flow). Detailed morphological, chemical, and structural investigations were carried out on all samples by field-emission scanning electron microscopy and x-ray diffraction analysis. The electrical response of the ZnO films was tested for H 2 gas (40 ppm, 80 ppm, and 120 ppm concentrations) in the temperature range of 200°C to 450°C. Results showed that the maximum response for all samples was reached at operating temperature of 400°C and variation of the annealing conditions resulted in improvement of the H 2 gas sensitivity of the ZnO thin films due to a change in the concentration of carriers.

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“…To activate the acceptor defects, a rapid thermal annealing (RTA) process is needed. However, intrinsic acceptor defects like zinc vacancy (V Zn ), interstitial oxygen (O i ), and antisite defect (O Zn ) also can be introduced into the undoped ZnO by annealing in high concentration of oxygen environment, which will bother us from distinguishing the formation of Sb‐related acceptors. For this very reason, the RTA treatments at 700 °C in N 2 and O 2 atmosphere were carried out to evaluate the activation of Sb related acceptor defects in our experiment.…”

Section: Resultsmentioning

confidence: 99%

Free‐Standing, Single‐Crystalline Parallelogram Sb Shallow‐Doped ZnO Wave‐Guided Optical Resonators

Liu

Dong

Lü

et al. 2014

Advanced Optical Materials

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Single‐crystalline Sb shallow‐doped ZnO microwire wave‐guided optical resonators are synthesized via a simple carbothermal reduction method. The formation of the ZnO wave‐guided microcavities are investigated systematically, and the Sb film formed on the substrate is confirmed to be the critical factor in crystal growth. The optical signals of the annealed ZnO microcavities induced by the Sb related acceptor defects are clarified through a low‐temperature spectrum detection technology. Excitation power and temperature dependence of UV lasing properties of the ZnO microcavities annealed in different atmospheres are studied. The results reveal that such high‐quality Sb shallow‐doped ZnO wave‐guided microcavities have excellent optical responses and a strong light‐field regulation capability, which would greatly promote the development of ZnO cavity‐based photoelectronic devices.

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Effects of the annealing environment on green luminescence of ZnO thin films

Cited by 22 publications

References 24 publications

Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

Improving the H2 Gas Sensitivity of ZnO Thin Films by Modifying the Annealing Conditions

Free‐Standing, Single‐Crystalline Parallelogram Sb Shallow‐Doped ZnO Wave‐Guided Optical Resonators

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