Effects of tensile stress induced by SiO2 passivation layer on the properties of AlGaN∕GaN heterostructure photodiode

You, Da; Tang, Yingwen; Xu, Jinping; Li, Xue; Li, Xiangyang; Gong, Haimei

doi:10.1063/1.2336624

Cited by 11 publications

(6 citation statements)

References 16 publications

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“…The maximum peak response of the PD is 0.192 A ∕ W at 340 nm. It is comparable with the PDs based on AlGaN photodiodes [25]. It could be found that the response peak of the PD at 340 nm is different from the absorption peak of MgZnO at 344 nm and the absorption peak of NPB at 346 nm.…”

supporting

confidence: 74%

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

Hu¹,

Li²,

Zhu³

et al. 2012

Opt. Lett.

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An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm2. The device showed a low dark current of about 3×10(-10) A and a high photo-dark current ratio of 1×10(5) at -2 V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A/W at the bias of -1 V.

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supporting

confidence: 74%

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

Hu¹,

Li²,

Zhu³

et al. 2012

Opt. Lett.

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“…The current increment may have resulted from the strain induced by the bottom PECVD oxide layer. It has been reported that SiO 2 or Si 3 N 4 passivation on AlGaN / GaN heterostructure can create stressinduced-polarizations thus increasing the 2DEG density [8], [9]. In this study, MOSHEMT-C with 10-nm low-density PECVD-SiO 2 layer was fabricated to specifically investigate the relationship between the induced stress and the change in the 2DEG properties.…”

Section: Methodsmentioning

confidence: 99%

Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics

Pang

Kim

2012

2012 IEEE Power and Energy Conference at Illinois

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A new SiO 2 -deposition scheme combining radiofrequency (rf) magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) has been developed to produce gate-SiO 2 for GaNbased metal-oxide-semiconductor highelectron-mobility-transistors (MOSHEMTs). The high-density sputtered-SiO 2 was employed to suppress the gate leakage current while the low-density PECVD-SiO 2 was used to protect the sputtering damage, and also to increase the drain current via stress-induced-polarizations. Thus-obtained MOSHEMT exhibited a drain current of over 100 mA and a gate leakage current of 4.2 nA/mm. A high breakdown voltage of 634 V was achieved for a short gate-drain length of 6 µm, showing the promise of the new SiO 2 -deposition scheme for the fabrication of GaN-based MOSHEMTs for high-power applications. Index Terms-AlGaN / GaN MOSHEMT, bimodal gate-SiO 2 , rf sputtering, breakdown voltage978-1-4577-1683-6/12/$26.00 ©2012 IEEE

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“…Moreover, a high density of 2DEG is beneficial to the sensitivity of surface condition and thus can be used to improve the hydrogen sensing capability [16]. Recently, on the other hand, the SiO 2 passivation has been employed in the AlGaN/GaN high electron mobility transistor (HEMT) [17,18]. Experimental results indicate that the SiO 2 passivation effectively improved the device performance such as cutoff frequency and breakdown voltage.…”

Section: Introductionmentioning

confidence: 96%