2012
DOI: 10.1016/j.materresbull.2012.04.099
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Effects of temperature on ZnO hybrids grown by metal-organic chemical vapor deposition

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Cited by 7 publications
(2 citation statements)
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References 17 publications
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“…The growth of ZnO NWs with high quality by catalyst-free MOCVD was explored firstly by Park et al [64]. After that, the huge effort has been put into the field of Methodologies for Achieving 1D ZnO Nanostructures Potential for Solar Cells DOI: http://dx.doi.org /10.5772/intechopen.83618 the synthesis of the ZnO nanostructures, and great progress has subsequently been obtained [65][66][67][68][69]. Up to now, the contributions relevant to MOCVD growth of ZnO nanostructures, diethylzinc (DEZn), dimethylzinc (DMZn) as zinc precursor, nitrogen or argon as carrier gas, and low reactor-pressures have been mostly used.…”
Section: Metal-organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…The growth of ZnO NWs with high quality by catalyst-free MOCVD was explored firstly by Park et al [64]. After that, the huge effort has been put into the field of Methodologies for Achieving 1D ZnO Nanostructures Potential for Solar Cells DOI: http://dx.doi.org /10.5772/intechopen.83618 the synthesis of the ZnO nanostructures, and great progress has subsequently been obtained [65][66][67][68][69]. Up to now, the contributions relevant to MOCVD growth of ZnO nanostructures, diethylzinc (DEZn), dimethylzinc (DMZn) as zinc precursor, nitrogen or argon as carrier gas, and low reactor-pressures have been mostly used.…”
Section: Metal-organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…Compared with ZnO nanoparticles (NPs), ZnO NRs arrays have obvious advantages in the process of photo-generated carriers transport. At present, the preparation methods of ZnO NRs arrays mainly include chemical vapor deposition (CVD), [14][15][16][17][18][19][20][21][22] microwave method, 23,24 hydrothermal method, [25][26][27][28][29][30][31][32][33][34][35] lowtemperature oxidation method, 36 electrodeposition method, [37][38][39][40][41][42][43][44] and other methods. [45][46][47][48][49][50][51][52][53][54][55][56] However, ZnO as a semiconductor oxide with wide band gap(~3.2 eV), which limits its utilization of light.…”
Section: Introductionmentioning
confidence: 99%