Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC

Yang, Bong-Jun; Lin, Lei; Lo, H. B.; Lai, P.T.

doi:10.1016/j.sse.2005.05.010

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…The (SiO 2 ) oxidation with appropriate trichloroethylene (TCE) concentration can reduce the gate oxide charges and improve the SiO 2 /Si interface properties and oxide reliability [10].…”

Section: Contributed Articlementioning

confidence: 99%

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Jiménez

Manera

Rautemberg

et al. 2010

Phys. Status Solidi (c)

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A reduction of gate depletion and DC characteristics in CMOS transistors with poly‐Si/SiGe Gate stack fabricated with local CMOS process is presented. Our local CMOS process uses a single n+ doped, poly‐Si/SiGe gate material. After deposition, both the poly‐Si and the SiGe used as gate layers were implanted by phosphorus ions. The parameters on threshold, sub‐threshold and low frequency noise 1/f of poly‐Si/SiGe CMOS transistors are reported. Our results demonstrate that the shift in threshold voltage due to the presence of Ge in the gate material is apparent from the p‐MOS and n‐MOS device characteristics. The drive current turn‐on in the I‐V characteristics increases compared with conventional CMOS transistors with poly‐Si gate and devices show low 1/f noise which make them promising devices for RF and microwave circuit applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The (SiO 2 ) oxidation with appropriate trichloroethylene (TCE) concentration can reduce the gate oxide charges and improve the SiO 2 /Si interface properties and oxide reliability [10].…”

Section: Contributed Articlementioning

confidence: 99%

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Jiménez

Manera

Rautemberg

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…It has been reported that TCE thermal oxidation can reduce the charges in the gate oxide and the traps at the SiC/SiO2 interface because the addition of chlorine can remove carbon clusters at the SiO2/SiC interface, getter charged impurities and reduce physical defects in the gate oxide [4,5]. As a result, the MOSFET has higher LFE, smaller flatband voltage, Vt and sub-threshold slope.…”

Section: Cox +C(+b)mentioning

confidence: 99%

“…Among these studies, improving the performance of SiC MOSFETs by different fabrication technologies is one important theme. Previous research has demonstrated that the properties of the SiO2/SiC interface can be improved by TCE oxidation [4,5]. In this work, we focus on the effects of TCE thermal gate oxidation on the electrical characteristics of SiC MOSFET, including its field-effect mobility, threshold voltage and subthreshold slope.…”

Section: Introductionmentioning

confidence: 99%

Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation

Yang¹,

Lin²,

Xu³

et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the Id-Vd characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO2 interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide.

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Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection

Yang

Kwok

Lai

2006

Microelectronics Reliability

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Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC

Cited by 5 publications

References 17 publications

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection

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