Effects of synthesis temperature on particle size/shape and photoluminescence characteristics of ZnS:Cu nanocrystals

Lee, Sangwook; Song, Daegwon; Kim, Dong-Jin; Lee, Jongwon; Kim, Seontai; Park, In Yong; Choi, Yong Dae

doi:10.1016/s0167-577x(03)00483-x

Cited by 168 publications

(52 citation statements)

References 14 publications

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“…The plot contains the peak centered at 425 nm. The PL peak at 425 nm has been known due to the recombination between the sulfur-vacancy-related donor and the valence band [13]. The sulfur deficiency in the synthesized nanocrystalline ZnS/PVA thin film was confirmed from energy distribution of X-ray (EDX) measurement of the sample (Fig.…”

Section: Resultsmentioning

confidence: 88%

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

2008

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ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I−V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.

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Section: Resultsmentioning

confidence: 88%

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

2008

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“…Other researchers [30][31] relate the PL emission in ZnS nanocrystals to the presence of sulfur vacancy and point defects.…”

Section: <Figs 7>mentioning

confidence: 99%

Structural and optical properties of ZnS/MgNb2O6 heterostructures

Santos

Cavalcante

Fabbro

et al. 2015

Superlattices and Microstructures

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“…From the PL spectra it was observed that pure ZnS nanoparticles showed only the blue self-activated (SA) luminescence emission peaks related with the point defects of the ZnS-host at 408 and 432 nm. These peaks in blue region have been known due to the recombination of the electrons between the sulfur-vacancy-related donor and the valence band [29,30]. A number of research groups [29][30][31][32] have studied the blue emission from ZnS nanoparticles under UV excitation.…”

Section: Optical Absorption and Optical Band Gap Studiesmentioning

confidence: 99%

“…These peaks in blue region have been known due to the recombination of the electrons between the sulfur-vacancy-related donor and the valence band [29,30]. A number of research groups [29][30][31][32] have studied the blue emission from ZnS nanoparticles under UV excitation. Usually for semiconductor nanocrystals, two emission peaks are observed which can be attributed to interstitial emission and the other trapped surface states emission, respectively [33].…”

Section: Optical Absorption and Optical Band Gap Studiesmentioning

confidence: 99%

Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles

Viswanath

Naik

Somalanaik

et al. 2014

Journal of Nanotechnology

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Pure ZnS and ZnS:Y nanoparticles were synthesized by a chemical coprecipitation route using EDTA-ethylenediamine as a stabilizing agent. X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), field emission scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FTIR), thermogravimetric-differential scanning calorimetry (TG-DSC), and UV-visible and photoluminescence (PL) spectroscopy were employed to characterize the assynthesized ZnS and ZnS:Y nanoparticles, respectively. XRD and TEM studies show the formation of cubic ZnS:Y particles with an average size of ∼4.5 nm. The doping did not alter the phase of the zinc sulphide, as a result the sample showed cubic zincblende structure. The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. The PL intensity of orange emission peak was found to be increased with an increase in yttrium ions concentration by suppressing blue emission peaks. These results strongly propose that yttrium doped zinc sulphide nanoparticles form a new class of luminescent material.

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Effects of synthesis temperature on particle size/shape and photoluminescence characteristics of ZnS:Cu nanocrystals

Cited by 168 publications

References 14 publications

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

Structural and optical properties of ZnS/MgNb2O6 heterostructures

Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles

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