Effects of Surface Passivation and Deposition Methods on the 1/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$f$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi, Thanh Ngoc; Malmros, Anna; Gamarra, Piero; Lacam, C.; Forte-Poisson, Marie-Antoinette di; Tordjman, M.; Hörberg, Mikael; Aubry, R.; Rorsman, Niklas; Kuylenstierna, Dan

doi:10.1109/led.2015.2400472

Cited by 18 publications

(7 citation statements)

References 11 publications

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“…13,14 Recently, AlInN/GaN HEMT passivated with ALD-Al 2 O 3 has also proved good candidate for millimeter wave power generation. 15 However, still there is a lack of detailed report on the direct-current (dc) and rf performance and the transport properties of Al 0.85 In 0.15 N/GaN MOS-HEMT on Si by using ALD-Al 2 O 3 as gate oxide as well as passivating material. In particular, a majority of the available reports for AlInN/GaN devices are on sapphire or SiC substrates.…”

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confidence: 99%

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Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Freedsman

Watanabe

Urayama

et al. 2015

Applied Physics Letters

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The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

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confidence: 99%

“…In particular, a majority of the available reports for AlInN/GaN devices are on sapphire or SiC substrates. [5][6][7]12,15,16 Addressing the issues aforementioned, we have fabricated Al 0.85 In 0. 15 performances compared to SB-HEMT.…”

mentioning

confidence: 99%

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Freedsman

Watanabe

Urayama

et al. 2015

Applied Physics Letters

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“…However, thanks to the benefits of wide band gap technology, some of these challenges will soon be overcome if more research goes into solving the respective problems. Recently, the field of power electronic devices has awakened to the wide band gap technology and this has resulted in the birthing of the high electron mobility transistors (HEMTs) [ 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 , 163 , 164 , 165 , 166 , 167 , 168 , 169 , 170 ]. These transistors, mostly MOSFETs and IGBTs, are made from materials such as silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), aluminum gallium nitride (AlGaN), etc.…”

Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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“…Lee et al [7] reported improved device performance by utilizing an in situ silicon carbon nitride (SiCN) cap layer, due to the enhanced surface passivation effect. Surface passivation also affects reduced noise performance in AlGaN/GaN-based or InAlN/GaNbased HEMTs [8][9][10]. No enhancement of noise performance according to the increased in fsitu SiN thickness was reported by Rzin et al [11].…”

Section: Introductionmentioning

confidence: 98%

Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

et al. 2021

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We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited enhanced drain current, reduced gate leakage current, low interface trap density (Dit), and high on/off ratio thanks to the passivation effect, compared to the device without SiCN cap layer. Both devices clearly showed 1/f noise behavior with carrier number fluctuations (CNF), regardless of the existence of SiCN cap layer. The proposed device presented the relative low trap density (Nit) and reduced access noise due to the effective surface passivation in source-drain access region compared to the device without SiCN cap layer. From the improved DC, C-V and noise results of the proposed device, the in situ SiCN cap layer plays an important role in the passivation layer and gate oxide layer in AlGaN/GaN HEMT.

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Effects of Surface Passivation and Deposition Methods on the 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Cited by 18 publications

References 11 publications

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

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