Effects of surface oxygen vacancies on electronic states of TiO2(110), TiO2(001) and SrTiO3(001) surfaces

Aiura, Y.; Nishihara, Y.; Haruyama, Yuichi; Komeda, Tadahiro; Kodaira, Shuji; Sakisaka, Y.; Maruyama, Toru; Kato, Hidemi

doi:10.1016/0921-4526(94)90937-7

Cited by 43 publications

(29 citation statements)

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“…Stoichiometric TiO 2 has a nominal Ti 4þ 3d 0 electronic configuration. The TiO 2 surface can be reduced to create O-vacancy defects and partially populate the 3d orbitals of the surface cations, leading to a 3d 1 ingap state induced by the presence of Ti 3þ defects [1,2]. It has been found that the reduced Ti 3þ (3d 1 ) states at the interface is also formed by metal deposition on TiO 2 surface [7,[9][10][11][12][13].…”

Section: Resultsmentioning

confidence: 96%

“…The Ti ions of stoichiometric, nearly perfect surfaces are found to have essentially the same electronic configurations as bulk Ti ions, Ti 4þ (3d 0 ), while oxygen-vacancy defects produced by ion bombardment and/or annealing in ultra high vacuum create surface states associated with surface Ti 3þ (3d 1 ) ions. Thus, oxygen vacancies induce a defect state that pins the Fermi level (E F ) just below the conduction-band minimum, and the d electrons associated with the Ti 3þ ions give rise to a band of surface states known as an ''in-gap'' state within the bulk band-gap of TiO 2 [1,2].…”

Section: Introductionmentioning

confidence: 99%

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Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces

et al. 2004

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces

et al. 2004

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“…It has been demonstrated that the electronic states of oxide surfaces can be monitored with the use of photoemission spectroscopy. 22,23 In the XPS spectrum for Ce 3d, there appear multiple and complex peaks originated from different final states reflecting a mixed valency.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial growth of CeO2(111) film on Ru(0001): Scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) study

Hasegawa¹,

Shahed²,

Sainoo³

et al. 2014

The Journal of Chemical Physics

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We formed an epitaxial film of CeO2(111) by sublimating Ce atoms on Ru(0001) surface kept at elevated temperature in an oxygen ambient. X-ray photoemission spectroscopy measurement revealed a decrease of Ce4+/Ce3+ ratio in a small temperature window of the growth temperature between 1070 and 1096 K, which corresponds to the reduction of the CeO2(111). Scanning tunneling microscope image showed that a film with a wide terrace and a sharp step edge was obtained when the film was grown at the temperatures close to the reduction temperature, and the terrace width observed on the sample grown at 1060 K was more than twice of that grown at 1040 K. On the surface grown above the reduction temperature, the surface with a wide terrace and a sharp step was confirmed, but small dots were also seen in the terrace part, which are considerably Ce atoms adsorbed at the oxygen vacancies on the reduced surface. This experiment demonstrated that it is required to use the substrate temperature close to the reduction temperature to obtain CeO2(111) with wide terrace width and sharp step edges.

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“…A study based on angleresolved PES (ARPES) ( Figure 5) showed that the BGSs were not dispersed. [58] Furthermore, the results of theoretical calculations of the electronic structure of Obvac suggested that the BGSs were localized at the Ti sites. [59][60][61] However, several other reports have stated that the BGSs are delocalized in TiO2.…”

Section: Electronic Structures Of Defectsmentioning

confidence: 98%

Atomic Defects in Titanium Dioxide

Minato

2014

The Chemical Record

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The functionality of solid materials is defined by the type and ordering of the constituent atoms. By introducing defects that perturb the ordered structure, new functionality is created within the solid material. Atomic defects in titanium dioxide, such as oxygen vacancies, atomic hydrogen, and interstitial Ti, typically create new functionality. However, the fundamental physical properties of atomic defects in TiO2 are not fully understood and still remain controversial. In this account, the progress and issues for debate regarding the physical properties, electronic structure, and manipulation mechanisms of atomic defects in TiO2 as well as their interaction with gold nanoclusters are described.

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Effects of surface oxygen vacancies on electronic states of TiO2(110), TiO2(001) and SrTiO3(001) surfaces

Cited by 43 publications

References 2 publications

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces

Epitaxial growth of CeO2(111) film on Ru(0001): Scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) study

Atomic Defects in Titanium Dioxide

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