Effects of surface dynamic behavior on hydrogen storage properties of sputter-deposited MgNi films

Wirth, E.; Milčius, D.; Lelis, Martynas; Pranevičius, L.; Kanapickas, Arvydas

doi:10.1016/j.surfcoat.2008.09.021

Cited by 8 publications

(1 citation statement)

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“…14 The Mg-based films prepared by sputtering, thermal evaporation and other methods exhibit obvious advantages because their composition, interface and crystallinity can be accurately tailored at the nanoscale. [15][16][17][18][19] The thickness of the film and the microstructure effects on the hydrogen absorption and desorption kinetics have been investigated. [20][21][22][23][24][25][26][27] Qu et al 23,24 demonstrated that Mg/Pd double layer and Pd/Mg/Pd triple layer films exhibited superior hydrogen absorption and desorption behavior.…”

Section: Introductionmentioning

confidence: 99%

Superior hydrogen storage and electrochemical properties of MgxNi100−x/Pd films at room temperature

et al. 2013

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The Mg(x)Ni(100-x) films of 100 nm have been prepared by magnetron co-sputtering Mg and Ni targets, and a Pd layer of 10 nm was deposited on these films by magnetron sputtering a Pd target. Mg2Ni and MgNi2 are directly generated during the co-sputtering process in the Mg84Ni16/Pd and Mg48Ni52/Pd films. The hydrogen storage properties of the films under 0.1 MPa H2 at 298 K were investigated. The hydrogenation of the Mg84Ni16/Pd film saturates within 45 s and exhibits the faster absorption kinetics compared with Mg94Ni6/Pd and Mg48Ni52/Pd films. The electrochemical properties of the Mg(x)Ni(100-x)/Pd films were investigated in 6 M KOH with a three-electrode cell. The Mg84Ni16/Pd film can be activated just at the first cycle. The maximum discharge capacity of the Mg84Ni16/Pd film is 482.7 mAh g(-1), the highest among these films.

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