Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth

Abstract

International audienceIndium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing that more crystalline nanocolumnar microstructures can be engineered at lower indium compositions. Nanocolumn diameter and packing factor (void fraction) was found to be highly dependent on substrate temperature, with thinner and more closely packed nanocolumns observed at lower substrate temperatures

Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cells

“…Figures 1c and 1d for the 204 nm-thick In0.64Ga0.36N and 221 nm-thick In0.68Ga0.32N films show single-phase isolated platelet/nanocolumnar grains with average diameters of 85 nm and 105 nm, respectively. The InxGa1-xN films display a clear relationship of larger grain or nanocolumn sizes with increasing indium content, which has been reported previously [13]. Figure 1d) revealing a partially coalesced nanocolumnar microstructure.…”

“…The gradient trend shows a slight increase in the index of refraction from substrate to surface as film indium content increases. This is attributed to fewer void spaces at the surface (more tightly packed 3-D islands/nanocolumns) at the surface -a phenomenon which has been previously reported [13].…”

“…The InxGa1-xN films were deposited using a plasma-enhanced evaporation process, which has been previously described in detail [13]. First, 6 nm amorphous GaN layers were deposited on 2 μm silicon dioxide coatings on silicon wafers.…”

InGaN photocell significant efficiency enhancement on Si - an influence of interlayer physical properties

“…Currently, thermally grown SiO 2 used as a gate dielectric for Si‐based metal oxide semiconductor (MOS) devices fabrication process, it possesses unique and well‐established electronic properties. Even microstructure developed on SiO 2 ‐based InGaN/Si has higher photo‐conversion knack . The given structure was found to increase current density in both top and bottom cells by reducing the recombination effects .…”

Влияние буферного слоя por-Si на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки

“…Стоит отметить, что получение In x Ga 1−x N-слоев приборного качества, пригодных для дальнейшего изготов-ления оптоэлектронных устройств на подложках Si, до сих пор является достаточно сложной задачей [3][4][5]. Значительные различия в параметрах кристаллической решетки и коэффициентах температурного расширения у твердых растворов III−N и Si приводят к генерации упругих напряжений, одним из каналов релаксации которых является генерация прорастающих дислокаций, являющихся центрами безызлучательной рекомбинации.…”