Effects of Structure Parameters on Temperature Characteristics of Multiple Quantum Well Ring Laser

Abstract

Abstract-Due to the potential application in all-optical signal processing, semiconductor ring laser (SRL) has become one of research hotspots in the present. In this paper, an equivalent SRL was modeled utilizing a numerical device simulator (ATLAS), and the effects of structure parameter on the temperature characteristics of multiple quantum well SRL were simulated and analyzed with temperature range from 260K to 460K. The simulation results indicated that an optimal quantum well structure with well width around 20nm and well number of five existed for the lowest threshold current density. And the ring radius has little effect on the temperature characteristics of differential quantum efficiency and lasing wavelength.