Thermal management of interfaces is crucial because thermal
boundary
resistance (TBR) is dominant in the overall thermal resistance. Most
studies on thermal transport at solid–liquid interfaces have
focused on solid surfaces with crystal planes or structures measuring
a few nanometers in size, and the influence of the surface structure
of a single-atomic structure on the interfacial thermal transport
remains unclear. This study investigated the TBR at Si–H2O interfaces with single-atomic structures (steps, clusters,
and adatoms). Conventional density depletion length (DDL) was found
to be unsuitable for evaluating thermal transport performance of surfaces
with atomic structures. Therefore, we developed radial DDL, defined
at each surface solid atom (RDDL), which is applicable to cases wherein
single-atomic structures exist on a planar solid surface. The TBR
decreased when single-atomic structures were attached to a surface
with a high surface density at the atomistic scale. The developed
RDDL, calculated focusing on each surface solid atom, exhibited a
property similar to that exhibited by conventional DDL. The thermal
transport decreased with an increase in the RDDL. Thus, RDDL facilitated
a comprehensive understanding of precise thermal transport properties
at the single-atomic scale via the simple measurement of the density
distribution at solid–liquid interfaces.