Effects of Strain in Low-Dimensional Semiconductor Structures

Jing, Yu; Chen, Y. H.; Liu, Y.; Cheng, Song

doi:10.1166/nnl.2017.2446

nanosci nanotechnol lett

2017

DOI: 10.1166/nnl.2017.2446

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Effects of Strain in Low-Dimensional Semiconductor Structures

Yu Jing¹,

Y. H. Chen²,

Y. Liu³

et al.

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Cited by 2 publications

(4 citation statements)

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“…Due to the relatively larger lattice constant of GeSn compared to Ge, the GeSn epilayer tends to be compliant to the lattice structure of the Ge core nanowire, which leads to the bending of the GeSn/Ge dual-nanowire as observed. The elastic deformation by the natural bending process enables the strain relaxation process during the growth of the GeSn epilayer on the Ge core NW, which results in the strain-relaxed GeSn/Ge dual-NW …”

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“…The elastic deformation by the natural bending process enables the strain relaxation process during the growth of the GeSn epilayer on the Ge core NW, which results in the strain-relaxed GeSn/Ge dual-NW. 38 The Sn composition and distribution in the GeSn/Ge dual-NW are studied via cross-sectional EDX mapping in scanning transmission electron microscopy (STEM), as shown in Figure 2. Figure 2a depicts the schematic diagram of the cross section of the GeSn/Ge dual-NW.…”

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Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Yang

Wang

et al. 2020

Nano Lett.

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GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.

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confidence: 99%

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confidence: 99%

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Yang

Wang

et al. 2020

Nano Lett.

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“…One should understand the interfacial structure in detail by means of structural investigations performed in situ during pulsed-laser deposition (PLD). This approach reveals how the structural setup of the layer/substrate interface would affect the structure and the morphology of the deposited h-LuFeO 3 .Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10].…”

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confidence: 99%

“…Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10].…”

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confidence: 99%

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

et al. 2019

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Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.the hexagonal phase depend strongly on the mutual orientation of the layer and substrate lattices (epitaxial orientation) as well as on the epitaxial strain (misfit). The epitaxial orientation is determined by the minimum free energy, which is related to the bonding across the substrate-epilayer interface and to the mismatch of the substrate and layer lattices. It is recognized that, despite the triangular symmetry matching on the abovementioned substrates, there is no obvious lattice match between h-RFeO 3 and Al 2 O 3 (0001) (a = 4.7602 Å), yttrium-stabilized zirconia (YSZ) (111) (a = 7.30 Å), or Pt (111) (a = 5.548 Å) [10].Nevertheless, an epitaxial growth of h-LuFeO 3 (LFO) could be obtained using the pulsed-laser deposition [6][7][8][9]11]. This means that the azimuthal epitaxial orientation of h-LuFeO 3 films cannot be explained simply by the lattice mismatch. One should understand the interfacial structure in detail by means of structural investigations performed in situ during pulsed-laser deposition (PLD). This approach reveals how the structural setup of the layer/substrate interface would affect the structure and the morphology of the deposited h-LuFeO 3 .Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10]. The growth of an additional Pt interlayer aims on the one side to reduce the lattice mismatch between the deposited h-LuFeO 3 layer and Al 2 O 3 (0001) substrate an...

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Effects of Strain in Low-Dimensional Semiconductor Structures

Cited by 2 publications

References 0 publications

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

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