Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature

Yu, Xuhu; Ma, Jin; Feng, Ji; Wang, Yuheng; Zhang, Xijian; Cheng, Chuanfu; Ma, Hongjuan

doi:10.1016/j.jcrysgro.2004.10.037

Cited by 152 publications

(73 citation statements)

References 17 publications

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“…However, the film deposited with 3% Ga concentration showed a weak (101) peak. It indicated that all of the deposited films are polycrystalline with wurtzite structure and had a preferred orientation with c-axis that perpendicular to the substrates (Yu et al, 2005). We found that Ga 2 O 3 phase was not found on the XRD patterns of deposited films.…”

Section: Methodsmentioning

confidence: 70%

“…Numerous studies have reported the deposition of ZnO:Ga films with variation deposition techniques such as atomic layer deposition (Maeng and Park, 2013), sol-gel method (Lin et al, 2010), chemical vapour deposition (Yang et al, 2009), physical vapour deposition (Lee, 2013), pulsed laser deposition (Shin et al, 2009), magnetron sputtering (Sheu et al, 2007), DC reactive magnetron sputtering (Ma et al, 2007) and RF sputtering (Yu et al, 2005). It has been reported that the properties of ZnO:Ga thin films are dependent on the deposition methods.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the carrier concentration increases as Ga-doped increases from 1 to 2%, while the carrier concentration decreases as Ga-doped increases from 2 to 3%. The increment of carrier concentration was considered due to the improvement of crystallinity (Yu et al, 2005). In this case, the doping of Ga atoms replace the Zn + sites in the crystal.…”

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confidence: 99%

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Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Marwoto¹,

Wibowo²,

Suprayogi³

et al. 2016

American Journal of Applied Sciences

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ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.

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Section: Methodsmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

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Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Marwoto¹,

Wibowo²,

Suprayogi³

et al. 2016

American Journal of Applied Sciences

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“…Thus, the aluminum atoms play important role in the crystal lattice, acting as substitutes ions. Consequently, a free electron is likely to be present for each substitutional of Al atom (Yu et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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“…Among these dopants, Ga shows its advantages over others such as lower reactivity with oxygen and smaller distortion of ZnO host lattice. 6 The gallium related compounds such as triethylgallium, 5 gallium nitrate, 6 gallium oxide 7 have been used as the Ga doping sources. In addition, the incorporation of gallium from solid substrates into ZnO crystals may occur through the diffusion during the growth process.…”

Section: Introductionmentioning

confidence: 99%

Controlling the anisotropy and domain structure with oblique deposition and substrate rotation

Chowdhury

Bedanta

2014

AIP Advances

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The ultraviolet photoluminescence of ZnO/ZnGa 2 O 4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0 X emission is easily saturated than the DAP emission from ZnO/ZnGa 2 O 4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa 2 O 4 composite layer. C 2014 Author(s)

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Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature

Cited by 152 publications

References 17 publications

Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Optical and Structure Analysis of ZnO:Al Film

Controlling the anisotropy and domain structure with oblique deposition and substrate rotation

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