Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

Semra, L.; Telia, A.; Kaddeche, M.; Soltani, A.

doi:10.1109/icengtechnol.2012.6396158

Cited by 7 publications

(2 citation statements)

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“…In x Al 1−x N/GaN heterostructures on c-plane in particular, which can be grown lattice matched to GaN layers for In concentrations ∼18% [8][9][10], have attracted increasing interest. However, strong polarization fields (several MV cm −1 ) occur in such heterostructures because of large differences in the spontaneous polarization coefficients between GaN and InAlN [11,12]. These internal fields can be utilized for polarization matching of InGaN based LEDs by using quaternary InAlGaN barriers [13] and are beneficial for the fabrication of high electron mobility transistors (HEMTs) [14].…”

Section: Introductionmentioning

confidence: 99%

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Susilo

Roumeliotis

Narodovitch

et al. 2018

J. Phys. D: Appl. Phys.

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In this paper the internal electric fields of nearly lattice matched InAlN/GaN heterostructures were determined. Pin-diodes containing InAlN/GaN heterostructures grown on (0 0 0 1) sapphire substrates by metalorganic vapour phase epitaxy were fabricated by standard lithography and metallization techniques. To determine the polarization fields in the InAlN quantum wells capacitance-voltage-measurements were performed on the pin-diodes. To reduce the measurement error, the heterostructure thicknesses were accurately determined by transmission electron microscopy. Large polarization fields, which correspond mainly to the spontaneous polarizations, for In 0.15 Al 0.85 N (5.9 ± 0.8 MV cm −1 ), In 0.18 Al 0.82 N (5.4 ± 0.9 MV cm −1 ) and In 0.21 Al 0.79 N (5.1 ± 0.8 MV cm −1 ) quantum wells were observed. The results of the internal field strength and field direction are in excellent agreement with values predicted by theory and a CVM-based coupled Poisson/carrier transport simulation approach.

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Section: Introductionmentioning

confidence: 99%

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Susilo

Roumeliotis

Narodovitch

et al. 2018

J. Phys. D: Appl. Phys.

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“…13 The strong advantage of In x Al 1-x N is a spontaneous high charges polarization leading to an extremely high carrier density in the two-dimension electron gas (2DEG), up to 3.5 × 10 13 cm −2 , which cannot be achieved with traditional AlGaN/GaN structures. [14][15][16][17] Besides, the near lattice matched composition with GaN is achieved for x = 0.17-0.20, leading to a strain-free heterojunction which drastically reduces the structural defects. 8,18,19 The main difficulty resides in making a high crystalline quality and a good homogeneity of In-AlN layers, 20,21 InN and AlN suffering from a large difference of covalent bond, resulting from phase separation and strong spinodal decomposition.…”

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confidence: 99%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

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The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d 5/2 , N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O 2 annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N 2 molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950 • C) and its stability over time is finally discussed. N 2 molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850 • C are recommended to preserve the barrier chemical integrity.

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Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

Bouveyron

Charles

2017

Journal of Crystal Growth

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Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

Cited by 7 publications

References 7 publications

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

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