Effects of solvent vapor annealing on the crystallinity and spin crossover properties of thin films of [Fe(HB(tz)3)2]

Bas, Alin-Ciprian; Shalabaeva, Victoria; Thompson, Xavier; Vendier, Laure; Salmon, Lionel; Thibault, Christophe; Molnár, Gábor; Routaboul, Lucie; Bousseksou, Azzedine

doi:10.1016/j.crci.2019.03.002

Cited by 12 publications

(13 citation statements)

References 32 publications

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“…31 Annealing of the film in an appropriate solvent vapor (water, acetone, …) affords then for the recrystallization of the film. 35 The cycling stability of a thermally evaporated ca. 100 nm thick nanocrystalline film of (1) has been analyzed in similar experimental conditions to the crystals (temperature ramping rate of ±20 °C/min between 50 and 80 °C).…”

Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Zhang

Ridier

et al. 2022

Mater. Adv.

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Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Zhang

Ridier

et al. 2022

Mater. Adv.

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“…Another approach would be to spin coat the molecular layers from solution, as in the case of Fe(hptrz) 3 ](OTs) 2 (hptrz = 4-heptyl-1,2,4-triazole, OTs = tosylate) [78]. The problem with making the thin film from solution is that solvent effects are known to alter the characteristics of the spin-state transition for some spin crossover complexes [79,80]. This is not likely to be an insurmountable problem, but realistically, the molecular solubility and solvent effects are issues that would have to be addressed if this were chosen as the route to large scale device fabrication.…”

Section: Making a Spin Crossover Molecular Thin Filmmentioning

confidence: 99%

“…First, there is the problem that the faster the switching speed, the higher the coercive voltage needed [87]. Second, the coercive voltages for each ferroelectric polarization direction may differ as the film thickness decreases [79]. The loss of symmetry in the coercive voltage can be the result of the interface with a conducting contact [92].…”

Section: The Search For a Low Coercive Voltage And Low Peak Write Curmentioning

confidence: 99%

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

et al. 2021

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Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

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“…Compound 1 is a molecular SCO complex, which undergoes a robust, isostructural, first‐order spin transition near 334 K in macroscopic single crystals . Recently, we have shown that very high‐quality, nanocrystalline films of 1 can be obtained by vacuum thermal evaporation followed by solvent vapor annealing . These films exhibit a well‐reproducible thermal SCO (similar to the bulk material) as well as an ultrafast (≈10 −13 s) light‐induced spin state switching at room temperature .…”

Section: Comparison Of Reported Elastic Moduli Ofmentioning

confidence: 99%

Direct Visualization of Local Spin Transition Behaviors in Thin Molecular Films by Bimodal AFM

Shalabaeva

Bas

Piedrahita‐Bello

et al. 2019

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Thin films of the molecular spin‐crossover complex [Fe(HB(1,2,4‐triazol‐1‐yl)3)2] undergo spin transition above room temperature, which can be exploited in sensors, actuators, and information processing devices. Variable temperature viscoelastic mapping of the films by atomic force microscopy reveals a pronounced decrease of the elastic modulus when going from the low spin (5.2 ± 0.4 GPa) to the high spin (3.6 ± 0.2 GPa) state, which is also accompanied by increasing energy dissipation. This technique allows imaging, with high spatial resolution, of the formation of high spin puddles around film defects, which is ascribed to local strain relaxation. On the other hand, no clustering process due to cooperative phenomena was observed. This experimental approach sets the stage for the investigation of spin transition at the nanoscale, including phase nucleation and evolution as well as local strain effects.

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Effects of solvent vapor annealing on the crystallinity and spin crossover properties of thin films of [Fe(HB(tz)3)2]

Cited by 12 publications

References 32 publications

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Direct Visualization of Local Spin Transition Behaviors in Thin Molecular Films by Bimodal AFM

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Effects of solvent vapor annealing on the crystallinity and spin crossover properties of thin films of [Fe(HB(tz)3)2]

Cited by 12 publications

References 32 publications

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)3)2]: from single crystals to thin films and electronic devices

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)3)2]: from single crystals to thin films and electronic devices

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Direct Visualization of Local Spin Transition Behaviors in Thin Molecular Films by Bimodal AFM

Contact Info

Product

Resources

About

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices