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2022
DOI: 10.1016/j.jallcom.2021.162402
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Effects of Sm implantation on the structure and magnetic properties of polar ZnO films

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Cited by 10 publications
(6 citation statements)
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“…The R ct between the metal and solution interface was determined as the reason for the high-frequency semicircular arc in the Nyquist diagram. The larger the diameter of the semicircular arc, the larger is the R ct value, indicating a longer diffusion path of the corrosion ions from the solution to the metal surface . Although the corrosion kinetic process of the ZSO material is not significantly different from that of the ZnO material, the ZSO shielding layer always has the largest resistance radius throughout the experiment.…”
Section: Resultsmentioning
confidence: 99%
“…The R ct between the metal and solution interface was determined as the reason for the high-frequency semicircular arc in the Nyquist diagram. The larger the diameter of the semicircular arc, the larger is the R ct value, indicating a longer diffusion path of the corrosion ions from the solution to the metal surface . Although the corrosion kinetic process of the ZSO material is not significantly different from that of the ZnO material, the ZSO shielding layer always has the largest resistance radius throughout the experiment.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, as the particle size decreased, the magnetic moment decreased, and the magnetic property weakened. However, as the particle size increased, the magnetic moment increased, and the magnetic properties strengthened [20]. Temperature also affects the Curie temperature of the magnetic cobalt-cuprumzinc ferrites, affecting their magnetic properties [21].…”
Section: Characterization Of the Magnetic Co X Cu Y Zn (1-x-y) Fe 2 O...mentioning
confidence: 99%
“…These implantationinduced defects might be favourable to achieve a desired number of acceptors in the case of p-type ZnO. Compared to other ion implantations, [36][37][38][39][40][41] few pieces of literature are available, which have focused on Li implantation in ZnO thin films. [42][43][44] In an attempt to make ZnO p-type, Nagar et al 44 have shown that Li implantation into ZnO thin films displays ntype conductivity even after employing annealing treatment due to the presence of donor defects.…”
Section: Introductionmentioning
confidence: 99%