Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Lim, Young Soo; Seo, Seung In; Kim, Bo Bae; Choi, Hyosung; Seo, Won Seon; Cho, Yong Soo; Park, Hyung Ho

doi:10.1007/s13391-012-2006-1

Cited by 11 publications

(3 citation statements)

References 24 publications

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“…Other research using AlN or various oxides (MoO x , Cu 2 O, and NiO) has been reported [14,16,18,20]. Despite such intensive research, only few studies were published using SiO 2 as an insulator [21]. SiO 2 , an excellent insulating material, is electrically reliable, biocompatible, non-toxic, cheap, and easy to fabricate.…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018

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Abstract:In this paper, we present a study of various ZnO/SiO 2 -stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO 2 /ZnO/SiO 2 micro-energy generators (SZS-MGs) and ZnO/SiO 2 /ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO 2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO 2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO 2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO 2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO 2 thin films in the ZnO/SiO 2 -stacked multilayer structures, in addition to the processing conditions.

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Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018

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“…Other research using AlN or various oxides (MoOx, Cu2O, and NiO) has been reported [12,14,17,18]. Despite such intensive research, only few studies were published using SiO2 as an insulator [19]. SiO2, an excellent insulating material, is electrically reliable, biocompatible, non-toxic, cheap, and easy to fabricate.…”

Section: Introductionmentioning

confidence: 99%

Formation and characterization of various ZnO/SiO2-stacked layers for flexible micro-energy harvesting devices

Yoon¹,

Jeon²,

Yoon³

2018

Preprint

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In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on ITO-coated PEN substrates using an RF magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/ SiO2-stacked multilayer structures, in addition to the processing conditions.

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“…Al‐doped ZnO (AZO) film is found to be one of the promising alternatives to these ITO thin films. It is because of the fact that zinc is a relatively cheap and abundant raw material, and AZO is quite stable in a reduced atmosphere and has comparable optical and electrical properties to those of ITO films …”

Section: Introductionmentioning

confidence: 99%

Study of Plasma Properties for the Low‐Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

Sahu

Han

Kim

et al. 2015

Plasma Processes & Polymers

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This work reports an investigation of the Al‐doped ZnO (AZO) film deposition process using ICP assisted DC magnetron plasmas, at different working pressures. The mechanism of plasma formation and plasma properties are analyzed by various diagnostic tools. Data show that there is the presence of low‐frequency oscillations in the range of 3–8 MHz, which are expected to be caused by high‐frequency waves. It is seen that ICP source is quite capable of producing the high‐energy warm electrons that are expected to be produced by the Landau damping. The plasma properties and their role on the electrical and structural properties of the AZO film are carefully studied. This work also reports the deposition of high conductive AZO films with resistivity as low as ∼ 6.8 × 10−4 cm using low‐temperature process.

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Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Cited by 11 publications

References 24 publications

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

Formation and characterization of various ZnO/SiO2-stacked layers for flexible micro-energy harvesting devices

Study of Plasma Properties for the Low‐Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

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