Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon

Silicide formation in Co/Si system investigated by depth-resolved positron annihilation and X-ray diffraction

“…Wen et al [3], through electrical measurements, reported that the implantation induced interstitials in Si were totally eliminated through the formation of TiSi 2 by the injection of vacancies. Similarly, silicidation reactions of metals on Si implanted with various species were also investigated [4] and it was found that the complete annihilation of implantation induced defects depends critically on the distance between the silicide/Si interface, the location of the original amorphous/crystalline interface, the annealing temperature, time etc. Thus, it is important to study the defects and their influence on silicidation using a defect characterization tool together with a complementary structural or phase characterization technique.…”