Effects of sic buffer layer on the optical properties of ZnO films grown on Si (111) substrates

Zhi‐Jian, Yang; Zheng, Haiwu; Su, Jianfeng; Lin, Bin; Fu, Zhaoming

doi:10.1016/j.jlumin.2006.03.004

Cited by 36 publications

(11 citation statements)

References 21 publications

(18 reference statements)

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“…Zhang et al [20] showed that the incorporation of a buffer layer, between the film and the substrate, improved the crystalline quality and structure of the film. Bang et al [21] found that the surface morphology and structural and optical properties of the films depended on the thickness of the buffer layer.…”

Section: Methodsmentioning

confidence: 99%

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

Kao

Hsu

Chen

et al. 2012

J Mater Sci: Mater Electron

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Al-doped zinc oxide (AZO) transparent, conductive thin films were deposited on inexpensive polyethylene terephthalate substrates, using radio frequency (rf) magnetron sputtering, with an AZO ceramic target (the Al 2 O 3 content is approximately 2 wt%). This paper presents an effective method for the optimization of the parameters for the deposition process for AZO thin films with multiple performance characteristics, using the Taguchi method, combined with grey relational analysis.Using the Taguchi quality design concept, an L 9 orthogonal array was chosen for the experiments. The effects of various process parameters (rf power, substrate-to-target distance, substrate temperature and deposition time) on the electrical, structural, morphological and optical properties of AZO films were investigated. In the confirmation runs, using grey relational analysis, the electrical resistivity of the AZO films was found to have decreased from 5.0 9 10 -3 to 1.6 9 10 -3 X-cm and the optical transmittance was found to have increased from 74.39 to 79.40%. The results demonstrate that the Taguchi method combined with grey relational analysis is an economical way to obtain the multiple performance characteristics of AZO films with the fewest experimental data. Additionally, by applying an Al buffer layer, of thickness 10 nm, the results show that the electrical resistivity was 3.1 9 10 -4 X-cm and the average optical transmittance, in the visible part of the spectrum, was approximately 79.12%.

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Section: Methodsmentioning

confidence: 99%

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

Kao

Hsu

Chen

et al. 2012

J Mater Sci: Mater Electron

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“…Films deposited on a buffer layer are better than those grown directly on the Si substrate. Many different buffer layers such as MgO [3], SiC [4] and MgF 2 [5] have been employed. ZnO is a promising material for light emitters in the UV region.…”

Section: Introductionmentioning

confidence: 99%

Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer

Shi

2011

Journal of Luminescence

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“…There have been a few reports on the use of seed layers such as ZnS, Lu 2 O 3 , and SiC for improving the crystallinity of ZnO films, but these seed layers incur an additional process cost [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

The Growth Mechanism of Al-doped ZnO using Oxygen Controlled Seed Layer in Si based Thin Film Solar Cells

Joo

Shin

Lee

et al. 2011

JSA

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We studied the growth mechanism of Al-doped ZnO (AZO) films using seed layers for enhancing the performance of transparent conducting oxides (TCOs) in the thin film solar cells. We carried out two-step processes for the deposition of AZO films. Seed layers were deposited on glass substrate as a function of Ar/O 2 gas flow ratio. We show the results of our investigation on the micro-structural properties of AZO seed layers using transmission electron microscopy (TEM). The elemental composition and electronic structure changes with the deposition conditions were examined using energy dispersive X-ray (EDX) and reflective electron energy loss spectroscopy (REELS). The optical and electrical characteristics of AZO film using the seed layer with Ar/O 2 = 9/1 show a high haze value of 88% at 500 nm and a resistivity value of 3.7 × 10 -4Ω·cm.

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Effects of sic buffer layer on the optical properties of ZnO films grown on Si (111) substrates

Cited by 36 publications

References 21 publications

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer

The Growth Mechanism of Al-doped ZnO using Oxygen Controlled Seed Layer in Si based Thin Film Solar Cells

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