Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

Lee, Po-Hsiang; Chang, Ping-Chuan; Chao, Der-Sheng; Liang, Jenq–Horng; Chang, Shu‐Hao; Tsai, Ming-Jinn; Chin, Tsung‐Shune

doi:10.1016/j.tsf.2012.06.067

Cited by 14 publications

(13 citation statements)

References 23 publications

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“…As a result, the crystallization becomes more difficult and the thermal stability of the amorphous state improves. This is in good consistent with the result of Al doped Sb 2 Te 3 [17] and Si doped GST [18]. In addition, the smaller grain sizes have more grain boundaries which in turn results in more carrier scattering.…”

Section: Resultssupporting

confidence: 90%

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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Phase change behavior in Al x (Sn 2 Se 3 ) 1-x (x = 0.003, 0.010, 0.023) films were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with increasing of Al content. The analysis of X-ray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping. Al 0.023 (Sn 2 Se 3 ) 0.977 has an excellent thermal stability with the crystallization activation energy of 3.79 eV and the failure time is longer than that of Ge 2 Sb 2 Te 5 film. The crystallization speed of Al 0.023 (Sn 2 Se 3 ) 0.977 film is faster than that of GST. The phase transition kinetics of Al 0.023 (Sn 2 Se 3 ) 0.977 films were investigated. The obtained values of Avrami indexes indicate that a one dimensional growth-dominated mechanism is responsible for the amorphous-crystalline transformation of Al 0.023 (Sn 2 Se 3 ) 0.977 film. We conclude that Al 0.023 (Sn 2 Se 3 ) 0.977 film is a good candidate for phasechange random-access memory applications with good thermal stability and high switching speed.

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Section: Resultssupporting

confidence: 90%

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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“…The crystallization fraction v is assumed to be proportional to resistance change. The crystallization fraction v at any given time can be redrawn and normalized by [18,19]:…”

Section: Resultsmentioning

confidence: 99%

Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application

Zhai

et al. 2015

Appl. Phys. A

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The carrier concentration of Sb-rich phase SnSb 4 , Ga 3 Sb 7 and superlattice-like [SnSb 4 (3.5 nm)/Ga 3-Sb 7 (4 nm)] 7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a onedimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phasechange speed of the SLL-7 thin film.

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“…1, the peak amount of boron ions in GST films can be estimated to be about 0. 16 post-annealing temperature is raised to 500°C, implying that a larger amount of boron incorporation would suppress the phase transition of the GST crystals from FCC to HCP. A previous study has reported that boron implantation may lead to the FCC-phase GST separating into two HCP phases of GeTe and Sb 2 Te 3 .…”

Section: Methodsmentioning

confidence: 99%

“…Some studies have proved that doping impurities is an effective way to optimize the intrinsic properties of GST. For example, incorporation of elements such as nitrogen, [7][8][9][10][11][12] oxygen, [11][12][13][14] and silicon [15,16] into GST indeed increases the GST resistivity, thus reducing the programming current. Some of them can also suppress the GST grain growth as well as enhance its thermal stability.…”

Section: Introductionmentioning

confidence: 99%

“…Some of them can also suppress the GST grain growth as well as enhance its thermal stability. [7,11,12,[14][15][16] In addition, it has been reported that doping boron is also favorable for the optical and electrical properties of Ge-Sb-Te ternary alloys. [17][18][19] Nevertheless, thus far most studies have focused on incorporating impurities into phase change materials using the reactive magnetron cosputtering technique.…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of phase transition in boron‐implanted Ge₂Sb₂Te₅ thin films for phase change memory applications

Chao

Lee

Liang

et al. 2014

Surface & Interface Analysis

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e Phase change memory has been considered as one of the most promising alternatives for next-generation nonvolatile semiconductor memory. Modification of phase change materials by impurity doping has been proved to be an effective way to improve phase change memory device performance. In this study, the most common phase change material, Ge 2 Sb 2 Te 5 (GST), was employed, and its intrinsic properties were modified using boron-ion implantation. The GST films were implanted with 20 keV boron ions to fluences of 5 × 10 14 and 5 × 10 15 ions/cm 2 . The characteristics of the virgin and boron-implanted GST films were investigated by SIMS, XRD, and in situ resistance measurement. The kinetics of the thermally activated phase transition was also analyzed on the basis of the Arrhenius relationship. The results revealed that both crystallization temperature and activation energy of crystallization increase with increasing the boron fluence. The data retention capability is also enhanced from 83 to 88°C, corresponding to a criterion of 10-year archival lifetime. In addition, the XRD spectra indicated that high-fluence boron-ion implantation partially inhibits the transition of the GST films from face-centered cubic phase to hexagonal close-packed phase. In conclusion, the thermal stability of the GST films can be improved through boron-ion implantation.

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Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

Cited by 14 publications

References 23 publications

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application

Characteristics of phase transition in boron‐implanted Ge₂Sb₂Te₅ thin films for phase change memory applications

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Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

Cited by 14 publications

References 23 publications

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application

Characteristics of phase transition in boron‐implanted Ge2Sb2Te5 thin films for phase change memory applications

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Characteristics of phase transition in boron‐implanted Ge₂Sb₂Te₅ thin films for phase change memory applications