Effects of selenium surface segregation on the texture of a selenium-doped FeSi alloy

Abstract

High-resolution Auger electron spectroscopy has been used to study selenium surface segregation on an Sedoped FeSi alloy. The surface segregation of Se and impurities such as C, P and S was measured in situ in the analysis chamber of an Auger spectrometer under ultrahigh vacuum conditions in the temperature range 200-850°C. At elevated temperatures (T ≥ 850°C), co-segregation of Se and S was observed to occur by means of x-ray photoelectron spectroscopy. It was also found that the surface segregation of selenium critically affected reconstruction of the (110) surface microstructure of the FeSi alloy, resulting in the formation of (100) planes at 850°C.

Decopperization by Utilization of the Filter

“…More types of copper selenides can be found in the work of [31]. In the work of [32], selenium was found to form Cu 2 Se and CuSe particles in the liquid iron containing Cu and Se.…”

Effect of Grain Boundary Segregation on Mechanical Properties of P-Doped Fe-Si Base Alloys

“…With intention to quantify the particular effects of the above processes, simple alloys have been investigated. In this respect the P-doped Fe-Si alloys, mostly free of precipitates, are suitable for the segregation studies [2,3]. As was described by McLean [4], the equilibrium grain boundary concentration of the impurity depends directly on its bulk concentration and the annealing temperature.…”