Effects of Sb doping on the structure and properties of SnO2 films

Sun, Mingyue; Liu, Juncheng; Dong, Beiping

doi:10.1016/j.cap.2020.01.009

Cited by 29 publications

(15 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, by comparing ATO1 and ATO2, it is clear that these two samples present opposite resistance changing trends with increasing temperature. This behavior was previously reported in [ 37 ]. The reason for this is that high doping concentrations cause a significant increase in the number of trap states due to excessive lattice defects [ 70 ], which dominate the carrier concentration above the critical level of Sb, lowering the film’s conductivity.…”

Section: Resultssupporting

confidence: 89%

“…Figure 3 b–d show the crystallite size of samples in different crystal directions (111), (100), and (001), respectively, which proves that an enlarged doping level resulted in a small crystallite size [ 60 ]. The reason for this result can be ascribed to the successful substitution of Sn ions with Sb into SnO 2 lattice [ 37 , 61 ].…”

Section: Resultsmentioning

confidence: 99%

“…Sb ions could exist as Sb 3+ or Sb 5+ in SnO 2 crystal structure depending on synthesis conditions (temperature, doping concentration, etc.) and on the temperature of the calcination treatment [ 37 , 38 ]. Therefore, Sb ions doping can significantly affect SnO 2 electrical, electrochemical, and optical properties by affecting the conducting band bending degree and inserting a new shallow band level [ 39 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Feng

Gaiardo

Valt

et al. 2022

Sensors

View full text Add to dashboard Cite

Tin dioxide (SnO2) is the most-used semiconductor for gas sensing applications. However, lack of selectivity and humidity influence limit its potential usage. Antimony (Sb) doped SnO2 showed unique electrical and chemical properties, since the introduction of Sb ions leads to the creation of a new shallow band level and of oxygen vacancies acting as donors in SnO2. Although low-doped SnO2:Sb demonstrated an improvement of the sensing performance compared to pure SnO2, there is a lack of investigation on this material. To fill this gap, we focused this work on the study of gas sensing properties of highly doped SnO2:Sb. Morphology, crystal structure and elemental composition were characterized, highlighting that Sb doping hinders SnO2 grain growth and decreases crystallinity slightly, while lattice parameters expand after the introduction of Sb ions into the SnO2 crystal. XRF and EDS confirmed the high purity of the SnO2:Sb powders, and XPS highlighted a higher Sb concentration compared to XRF and EDS results, due to a partial Sb segregation on superficial layers of Sb/SnO2. Then, the samples were exposed to different gases, highlighting a high selectivity to NO2 with a good sensitivity and a limited influence of humidity. Lastly, an interpretation of the sensing mechanism vs. NO2 was proposed.

show abstract

Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Feng

Gaiardo

Valt

et al. 2022

Sensors

View full text Add to dashboard Cite

show abstract

“…In addition, the increase in the screening effect of dislocation by a high density of doped electrons and enhanced crystallinity may also increase the mobility of the films [31,37]. However, with 3.0 mol% Ta doping, the mobility slightly decreases (20.9 cm 2 V −1 s −1 ), which may result from the increase of defects such as ionized impurity scattering [17,[38][39][40]. The application of TTO thin film in various optoelectronic devices also requires both the optimal electrical and optical properties as estimated by Haacke's figure of merit (FOM) = T 10 /R s , where T refers to transmittance and R s is the sheet resistance [41].…”

Section: Electrical and Optical Properties Of The Tto Thin Filmsmentioning

confidence: 99%

Transparent conductive SnO2 thin films via resonant Ta doping

et al. 2022

View full text Add to dashboard Cite

Transparent conductive oxide (TCO) thin films are highly desired as electrodes for modern flat-panel displays and solar cells. Alternative indium-free TCO materials are highly needed, because of the scarcity and the high price of indium. Based on the mechanism of resonant doping, Ta has been identified as an effective dopant for SnO 2 to achieve highly conductive and transparent TCO. In this work, we fabricated a series of Ta-doped SnO 2 thin films (Sn 1−x Ta x O 2 , x = 0.001, 0.01, 0.02, 0.03) with high conductivity and high optical transparency via a low-cost sol-gel spin coating method. The Sn 0.98 Ta 0.02 O 2 film achieves the highest electrical conductivity of 855 S cm −1 with a carrier concentration of 2.3 × 10 20 cm −3 and high mobility of 23 cm 2 V −1 s −1 . The films exhibit a very high optical transparency of 89.5% in the visible light region. High-resolution X-ray photoemission spectroscopy and optical spectroscopy were combined to gain insights into the electronic structure of the Sn 1−x Ta x O 2 films. The optical bandgaps of the films are increased from 3.96 eV for the undoped SnO 2 to 4.24 eV for the Sn 0.98 Ta 0.02 O 2 film due to the occupation of the bottom of conduction band by free electrons, i.e., the Burstein-Moss effect. Interestingly, a bandgap shrinkage is also directly observed due to the bandgap renormalization arising from many-body interactions. The double guarantee of transparency and conductivity in Sn 1−x Ta x O 2 films and the low-cost growth method provide a new platform for optoelectronic and solar cell applications.

show abstract

“…Additionally, ATO has a broad band gap (>3.60 eV) and high electron mobility [13]. Antimony (Sb) appears to be a good dopant for SnO 2 since substitution of Sn +4 for Sb +5 in the SnO 2 lattice greatly enhances the n-type semiconductor properties in it The ionic radii of Sb +2 (0.62 Å) is comparable to that of an Sn ion (0.69 Å) [14] due to distortion caused by incorporation of Sb in SnO 2 lattice. Therefore, the fabrication of ATO nanoparticles is essential for a range of applications.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of infrared shielding property of SnO₂ using Sb as a dopant

Ahmad

Ansari

2022

Mater. Res. Express

View full text Add to dashboard Cite

Transparent conducting oxides (TCO) are essential to the operation of advanced energy harvesting and storage devices, as well as display technology. Doped tin oxide (SnO2) exhibits enhanced optical and thermal characteristics in comparison to undoped SnO2. In this article, the cost-effective sol-gel methodology was employed in the synthesis of tin oxide (SnO2) and antimony (Sb) doped tin oxide nanoparticles. According to the XRD analysis, the tetragonal structure was maintained despite the apparent reduction in crystal size as the amount of Sb increased. In the study, the effect that Sb doping has on absorption and reflection in the visible and near-infrared regions was analyzed. The band gap of the nanoparticles was observed to broaden as the concentration of Sb doping was increased from 3.44eV (ATO-0) to 4.62eV (ATO-6). The results from UV-Vis-NIR spectra demonstrated that the ATO films efficiently reduced the amount of infrared light that passed through them. The results of the heat-insulation test showed that ATO-coated glass outperformed uncoated glass in terms of heat insulation. Because of these characteristics, ATO could be a good replacement material, especially for solar cells and smart windows.

show abstract

Effects of Sb doping on the structure and properties of SnO2 films

Cited by 29 publications

References 31 publications

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Transparent conductive SnO2 thin films via resonant Ta doping

Enhancement of infrared shielding property of SnO₂ using Sb as a dopant

Contact Info

Product

Resources

About

Effects of Sb doping on the structure and properties of SnO2 films

Cited by 29 publications

References 31 publications

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Investigation on Sensing Performance of Highly Doped Sb/SnO2

Transparent conductive SnO2 thin films via resonant Ta doping

Enhancement of infrared shielding property of SnO2 using Sb as a dopant

Contact Info

Product

Resources

About

Enhancement of infrared shielding property of SnO₂ using Sb as a dopant