2011
DOI: 10.1016/j.tsf.2011.01.065
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Effects of rf power on the structural properties of carbon nitride thin films prepared by plasma enhanced chemical vapour deposition

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Cited by 21 publications
(15 citation statements)
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“…A set of a-CN x thin films was prepared at applied rf power of 50, 60, 70, 80, 90 and 100 W. Prior to the actual deposition process, the quartz substrates were exposed to hydrogen plasma treatment for 10 min at H 2 flow rate and rf power fixed at 50 sccm and 50 W, respectively. This was done to remove impurities on the substrate surface and improve the adhesion of CN layers onto the substrate [11]. The a-CN x thin films samples were deposited for 90 min and substrate temperature at 100 o C. Samples were anneal in a quartz tube furnace in pure Ar at 400 o C for 1 hour.…”
Section: Methodsmentioning
confidence: 99%
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“…A set of a-CN x thin films was prepared at applied rf power of 50, 60, 70, 80, 90 and 100 W. Prior to the actual deposition process, the quartz substrates were exposed to hydrogen plasma treatment for 10 min at H 2 flow rate and rf power fixed at 50 sccm and 50 W, respectively. This was done to remove impurities on the substrate surface and improve the adhesion of CN layers onto the substrate [11]. The a-CN x thin films samples were deposited for 90 min and substrate temperature at 100 o C. Samples were anneal in a quartz tube furnace in pure Ar at 400 o C for 1 hour.…”
Section: Methodsmentioning
confidence: 99%
“…When the rf power exceeds 80W, CH 4 , the power is high enough to completely dissociate the main precursor gas resulting in the saturation of available radicals and consequently the deposition rate [11]. Normally the radicals formed would react with unreacted molecules in secondary reactions in the plasma.…”
Section: Methodsmentioning
confidence: 99%
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“…Dalam kajian ini, gas C 2 H 2 digunakan. Dalam kajian yang lepas oleh (Othman et al 2011), gas metana (CH 4 ) digunakan semasa pemendapan filem. Saiz kluster filem yang dimendapkan menggunakan gas metana berkurang apabila kuasa RF bertambah dan lebih kecil berbanding filem yang dimendapkan menggunakan gas C 2 H 2 .…”
Section: Kaedah Uji Kajiunclassified
“…Pelbagai teknik boleh digunakan untuk menghasilkan filem nipis a-CN x seperti percikan magnetron (Nakayama et al 1993), pemendapan wap kimia (CVD) (Zhang et al 1996), pemendapan pancaran ion (Hammer et al 1996) dan pemendapan wap kimia secara peningkatan plasma (PECVD) . Antara teknik tersebut, PECVD digunakan kerana mempunyai beberapa kelebihan iaitu pemendapan yang luas dan homogen, lekatan yang baik serta ketumpatan liang jejarum yang rendah (Othman et al 2011). Pemendapan menggunakan teknik PECVD juga dapat dijalankan pada suhu rendah.…”
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