2010
DOI: 10.1016/j.sna.2010.02.022
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Effects of residual stresses on lead–zirconate–titanate (PZT) thin-film membrane microactuators

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Cited by 19 publications
(12 citation statements)
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References 24 publications
(27 reference statements)
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“…Assuming that the voltage across the piezoelectric layer is denoted as V avg , the electric field can be approximately expressed assuming the uniform electrical field hypotheses. Then, (19) …”
Section: Charge Sensitivity Modellingmentioning
confidence: 99%
See 3 more Smart Citations
“…Assuming that the voltage across the piezoelectric layer is denoted as V avg , the electric field can be approximately expressed assuming the uniform electrical field hypotheses. Then, (19) …”
Section: Charge Sensitivity Modellingmentioning
confidence: 99%
“…Assuming that the voltage across the piezoelectric layer is denoted as V avg , the electric field can be approximately expressed assuming the uniform electrical field hypotheses. Then, (19) where t p is the thickness of the piezoelectric layer. Substitution of equation (19) into (18) and solving it leads to: (20) where φ is the slope of the deflection of the beam (deformation).…”
Section: Frequency Response Analysismentioning
confidence: 99%
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“…In this work, the authors intend to generate the design guidelines for design and manufacture of piezoelectric accelerometers for structural health monitoring. Active materials with larger piezoelectric constants, such as PZT, can widen the performance gap of piezoelectric accelerometers [34,[37][38][39][40][41][42][43][44][45]. ZnO has also been employed for the active piezoelectric film due to relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce large-area films without pinholes, and proven compatibility with IC integration [46][47][48].…”
Section: Introductionmentioning
confidence: 99%