Effects of rapid thermal processing on chemically deposited antimony sulfide thin films

Vinayakumar, Vineetha; Hernández, C.R. Obregón; Shaji, Sadasivan; Avellaneda, David Avellaneda; Aguilar-Martínez, J.A.; Krishnan, Bindu

doi:10.1016/j.mssp.2018.02.011

Cited by 25 publications

(13 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The formation of Sb metal is believed to be caused by the reduction of Sb 3+ during Ar + sputtering on the surface as S atoms are preferentially removed. [20] In the S 2p region, a doublet centering at 161.7 and 162.9 eV corresponds well with the BE of S 2− in Sb 2 S 3 . For Cd-Sb 2 S 3 , the almost identical BEs of Sb 3d and S 2p with those of Pn-Sb 2 S 3 are obtained.…”

Section: Distribution Of Elements Across the Filmsupporting

confidence: 61%

“…For Pn-Sb 2 S 3 , photoelectron peaks located at binding energy (BE) of 539.0 and 529.6 eV can be assigned to Sb 3d 3/2 and Sb 3d 5/2 , respectively, which correspond to the Sb 3+ states in Sb 2 S 3 . [20] In addition, we can also observe two small shoulder peaks centered at 538.1 and 528.8 eV, which can be ascribed to Sb 0 . The formation of Sb metal is believed to be caused by the reduction of Sb 3+ during Ar + sputtering on the surface as S atoms are preferentially removed.…”

Section: Distribution Of Elements Across the Filmmentioning

confidence: 78%

See 1 more Smart Citation

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

Jin

Fang

Salim

et al. 2020

Adv Funct Materials

102

107

View full text Add to dashboard Cite

Binary compound antimony sulfide (Sb2S3) with its nontoxic and earth‐abundant constituents, is a promising light‐harvesting material for stable and high efficiency thin film photovoltaics. The intrinsic quasi‐1D (Q1D) crystal structure of Sb2S3 is known to transfer photogenerated carriers rapidly along the [hk1] orientation. However, producing Sb2S3 devices with precise control of [hk1] orientation is challenging and unfavorable crystal orientations of Sb2S3 result in severe interface and bulk recombination losses. Herein, in situ vertical growth of Sb2S3 on top of ultrathin TiO2/CdS as the electron transport layer (ETL) by a solution method is demonstrated. The planar heterojunction solar cell using [hk1]‐oriented Sb2S3 achieves a power conversion efficiency of 6.4%, performing at almost 20% higher than devices based on a [hk0]‐oriented absorber. This work opens up new prospects for pursuing high‐performance Sb2S3 thin film solar cells by tailoring the crystal orientation.

show abstract

Section: Distribution Of Elements Across the Filmsupporting

confidence: 61%

Section: Distribution Of Elements Across the Filmmentioning

confidence: 78%

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

Jin

Fang

Salim

et al. 2020

Adv Funct Materials

102

107

View full text Add to dashboard Cite

show abstract

“…Both as-deposited and FSL-irradiated films exhibit broadband Raman scattering as a characteristic of α-Sb 2 S 3 . [25,34] The films processed by RTP and CWL have the same set of peak wavelengths corresponding to known vibration modes that affirm crystallization, [35] that is, 284 and 157 cm -1 to A g , 238 cm -1 to B 1g /B 3g , 188 cm -1 to B 2g , 312, 301, and 128 cm -1 to B 1g . Thus, the contrast experiments have verified the good performance of crystallization by CWL and re-amorphization by FSL.…”

Section: Film Characteristicsmentioning

confidence: 99%

Intermediate Phase‐Change States with Improved Cycling Durability of Sb₂S₃ by Femtosecond Multi‐Pulse Laser Irradiation

Gao

Tian

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Sb 2 S 3 has great potential to become a good phase-change material for visible and near-infrared wavebands due to its low loss and high refractive index contrast, so great interest lies in the technology development. This work investigates the intermediate phase-change states and their cycling durabilities by employing a continuous-wave laser for crystallization and a femtosecond laser for amorphization. By considering stratified partial amorphization due to non-uniform intensity distribution along propagation in a film, a double-layer model is proposed to describe intermediate states, which fits experimental data better than the mixture models in effective medium approximation. The phase-change degree is then defined as the ratio of the amorphization depth to the total film thickness, which can be controlled by combination of the pulse energy and the number of pulses in multi-pulse femtosecond laser irradiation for amorphization. The cycling durability is improved by reducing pulse energy and increasing the number of pulses. The experimentally achieved maximum cycling durabilities are 30, 1000, and 7000 cycles for 90%, 60%, and 20% phase-change degrees. The implementation of intermediate states with improved cycling durability may promote the development of Sb 2 S 3 -based reconfigurable photonic devices.

show abstract

“…Sulfides based composites are non-toxic, although Research Ar cle h p://doi.org/10.54738/MI.2021.1105 associated efficiencies of these photovoltaics are up to 10.1%. As a result of their non-toxicity and abundance, sulfide materials are preferred as absorber layers in solar cells [14][15][16][17][18] .Thin films of pure and doped with Sb 2 S 3 are commonly used for photovoltaic devices. The reason for using Sb 2 S 3 thin films for energy conversion in solar cells is their properties, such as having a direct bandgap of 1.78-2 eV and a high absorption coefficient of 10 4 -10 5 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Role of Sn Inclusions on Structural, Electrical and Optical Properties of Sb2S3

Abdullah¹,

Syed²,

Ali³

et al. 2021

View full text Add to dashboard Cite

Tin an mony sulfide (TAS) thin films are deposited on a glass substrate using a two-source thermal evapora on method. The doping was done to inves gate its results on the structural, electrical, and op cal proper es of n-an mony sulfide thin films. XRD studies disclosed that annealed films exist in the Sn 2 Sb 2 S 5 phase. The accurate informa on about the composi on and concentra on depth of the as-deposited and annealed Sn 2 Sb 2 S 5 thin-films was recorded by the Rutherford backsca ering spectroscopy (RBS) technique. The photoconduc vity response of these films was also excellent and enhanced with the increasing concentra on of n sulfide. The obtained bandgap was in the range of 1.68-2.31 eV. The thickness of the films was observed to be 240 nm to 336 nm, and the thin films possessed P-type conduc vity. Electrical proper es are significantly enhanced for the ternary compound Sn 2 Sb 2 S 5 as compared to Sb 2 S 3 . Results show that an mony n sulfide has excellent poten al in photovoltaic applica ons.

show abstract

Effects of rapid thermal processing on chemically deposited antimony sulfide thin films

Cited by 25 publications

References 28 publications

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

Intermediate Phase‐Change States with Improved Cycling Durability of Sb₂S₃ by Femtosecond Multi‐Pulse Laser Irradiation

Role of Sn Inclusions on Structural, Electrical and Optical Properties of Sb2S3

Contact Info

Product

Resources

About

Effects of rapid thermal processing on chemically deposited antimony sulfide thin films

Cited by 25 publications

References 28 publications

In Situ Growth of [hk1]‐Oriented Sb2S3 for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

In Situ Growth of [hk1]‐Oriented Sb2S3 for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

Intermediate Phase‐Change States with Improved Cycling Durability of Sb2S3 by Femtosecond Multi‐Pulse Laser Irradiation

Role of Sn Inclusions on Structural, Electrical and Optical Properties of Sb2S3

Contact Info

Product

Resources

About

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

In Situ Growth of [hk1]‐Oriented Sb₂S₃ for Solution‐Processed Planar Heterojunction Solar Cell with 6.4% Efficiency

Intermediate Phase‐Change States with Improved Cycling Durability of Sb₂S₃ by Femtosecond Multi‐Pulse Laser Irradiation