Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

Near-constant resistivity in 4.2-360 K in a B2 Al2.08CoCrFeNi

“…However, due to the effect of magnetic atoms, which may be present in the materials, and phonon on the electrical carriers, holes or electrons, it is hard to obtain materials that have constant resistivity in a specific narrow range of temperature used, not to mention for a wide temperature range. Hence, many efforts have been made in lowering the TCR by either controlling the manufacturing processes of materials [1][2][3][4][5][6] or using composite materials. 7 Attempts to explain the low TCR for metallic materials include mechanisms such as based on a mixture effect of surface oxide and inner metallic phase, 8 the effect of K-state associated with the formation of short-range order, 9 or the s-d scattering in transition metals.…”

Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering

“…Tantalum nitride has received particular interest in recent years because of its inherent properties, such as good thermal stability and low electrical resistivity [3]. Consequently tantalum nitride thin films have been recently developed for microelectronic applications as efficient diffusion barriers in Cu-based metallization.…”

“…TaN exhibits different stable phases such as bcc-TaN, hcp-Ta 2 N, fcc-TaN, hexagonal-TaN, hexagonal-Ta 5 N 6 , tetragonal-Ta 4 N 5 and orthorhombic-Ta 3 N 5 [4], with differing physical, chemical and mechanical properties depending on the growth conditions. In general, these films are grown by physical and chemical vapour deposition techniques [5][6][7][8]. Because tantalum nitride has a defective structure, variations in stoichiometry are common in these films.…”

Growth and Study of Plasma Assisted Nanostructured Hard Tantalum Nitride Thin Films

“…The properties like chemical and thermal inertness, corrosion resistance [1][2][3], good thermal stability, low electrical resistivity [4], wear resistance [5] and excellent adhesion on dielectric for diffusion barrier between silicon and metal over layers [6,7] have made tantalum nitride (TaN) films an attractive candidate for several industrial applications. These films have also been comprehensively used as key elements of mask absorbers of X-ray lithography and hard protective coatings [8,9].…”