“…However, correlation of these processes, i.e. annealing in an oxygen-containing atmosphere at about 400-500 • C and/or introduction of CdCl 2 either during or after CdTe film growth, with the resulting film and device properties seems to vary with the CdTe deposition technique as well as with the specifics of the postdeposition treatments [4,5]. The process induced and the preparation conditions effects have been investigated in detail for the sintered [6,7], MOCVD and MBE grown [8,9], screen printed [10] electrodeposited [11,12] physical vapour deposited [13,14] and CSS [15][16][17] CdS/CdTe devices and materials.…”