Effects of processing on the properties of polycrystalline CDTE grown by various deposition techniques

Abou‐Elfotouh, F.; Moutinho, H. R.; Hasoon, Falah S.; Ahrenkiel, R. K.; Levi, Dean H.; Kazmerski, L. L.

doi:10.1109/pvsc.1993.347132

Cited by 4 publications

(6 citation statements)

References 6 publications

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“…However, correlation of these processes, i.e. annealing in an oxygen-containing atmosphere at about 400-500 • C and/or introduction of CdCl 2 either during or after CdTe film growth, with the resulting film and device properties seems to vary with the CdTe deposition technique as well as with the specifics of the postdeposition treatments [4,5]. The process induced and the preparation conditions effects have been investigated in detail for the sintered [6,7], MOCVD and MBE grown [8,9], screen printed [10] electrodeposited [11,12] physical vapour deposited [13,14] and CSS [15][16][17] CdS/CdTe devices and materials.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Bayhan

Erçelebi

1997

Semicond. Sci. Technol.

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The effects of post-deposition processes such as CdCl 2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl 2 dip followed by air annealing at 300 • C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current transport mechanism for the as-grown samples, while depletion region recombination starts to be dominant after annealing the samples with CdCl 2 . Below 280 K multistep tunnelling is identified to be the dominant transport mechanism. Frequency-dependent capacitance-voltage studies revealed that after annealing with CdCl 2 the density of interface states decreases and the quality of the heterointerface improves. The capacitance of the CdS/CdTe heterojunctions has been analysed using a model based on the existence of a single dominant trap level, identified at 0.40 eV above the valence band with a concentration of 5.1 × 10 15 cm −3 .

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Section: Introductionmentioning

confidence: 99%

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Bayhan

Erçelebi

1997

Semicond. Sci. Technol.

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“…These results showed that the presence of CdCl 2 layer enhanced the recrystallization of films. The CdCl 2 layer causes chloride ion (Cl -) moves via grain boundaries diffusion through the CdTe site which was due to the fact that Clatomic radius 97×10 -12 m was expected to substitute over telluride atoms 207×10 -12 m or cadmium atom 169×10 -12 m [20], so that the of CdCl 2 eliminates the effect of the defect density [21]. Fig.…”

Section: Fig 2: the Xrd Spectra For Cdte Powder As Deposited And Anmentioning

confidence: 99%

The influence of CdCl2 layer and annealing process on the structural and electrical properties of CdTe films

Razooqi¹

2019

IJP

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A polycrystalline CdTefilms have been prepared by thermal evaporation technique on glass substrate at room temperature. The films thickness was about700±50 nm. Some of these films were annealed at 573 K for different duration times (60, 120 and 180 minutes), and other CdTe films followed by a layer of CdCl2 which has been deposited on them, and then the prepared CdTe films with CdCl2 layer have been annealed for the same conditions. The structures of CdTe films without and with CdCl2 layer have been investigated by X-ray diffraction. The as prepared and annealed films without and with CdCl2 layer were polycrystalline structure with preferred orientation at (111) plane. The better structural properties have been observed in presence of CdCl2 layer. The D.C conductivity for CdTe films with CdCl2 layershowed higher values. The electrical activation energy influenced with increasing duration times of annealing. Hall Effect measurement was indicated that all CdTe films are p-type. The carrier concentration, Hall mobility and the carrier life time wereaffected by increasing duration times of annealing.

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“…On Earth, CdS/CdTe solar cells are typically deposited on glass superstrates using various forms of thermal evaporation [14,15]. Based on vapor pressure curves, CdS and CdTe source material temperatures are around 600 • C for evaporation, which is a substantial reduction in power required over the ∼ 1400 • C necessary for Si.…”

Section: Alternative Solar Cell Materialsmentioning

confidence: 99%

“…The main feature of the CdTe spectrum was a peak at 1.399 eV. This peak is due to Cd vacancies [14]. This is the defect that causes the CdTe film to be p type [17].…”

Section: Alternative Solar Cell Materialsmentioning

confidence: 99%

First demonstration of photovoltaic diodes on lunar regolith-based substrate

et al. 2005

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Effects of processing on the properties of polycrystalline CDTE grown by various deposition techniques

Cited by 4 publications

References 6 publications

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

The influence of CdCl2 layer and annealing process on the structural and electrical properties of CdTe films

First demonstration of photovoltaic diodes on lunar regolith-based substrate

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