Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

Abstract

An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

High Thermal Performance of SnO2:F Thin Transparent Heaters with Scattered Metal Nanodots

“…15 The maps suggest the Cr-nd FTO heater shows the most uniform value (14.65%), followed by NiCr-nd FTO (19.2%), bare FTO (19.7%), and Ni-nd FTO (30%). The thermal uniformity of our FTO-based heaters seemed much better than that developed with a patterned wire, 20 a heater type commonly used to remove mist in conventional car windows today.…”

Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

“…Moreover, the FOM obviously was reduced to a value lower than unity for the cosputtered ITO-ZnO film's contact n-GaN epilayer. This value is calculated according to the following expression which takes into consideration both the specific contact resistance, ρc, and the average optical transmittance, Tave [19,20]: The higher the FOM of the Ti/ITO-ZnO system obtained, the better the quality of the transparent electrode contacted to the n-GaN epilayer. Table 2 gives the FOM of the Ti/ITO-ZnO systems as a function of the thickness of the Ti interlayer.…”

“…2016, 6, 60 6 of 9 n-GaN epilayer. This value is calculated according to the following expression which takes into consideration both the specific contact resistance, ρc, and the average optical transmittance, Tave [19,20]: Table 2. Specific contact resistance, optical average transmittance, and FOM of the Ti/ITO-ZnO systems as a function of the thickness of the Ti interlayer (the specific contact resistance of the TI/Al contact to the n-GaN epilayer also is given for comparison).…”

“…Herein, we proposed the figure of merit (FOM), Φ, to quantitatively determine the performance of these transparent electrodes' ohmic contact to the n-GaN epilayer. This value is calculated according to the following expression which takes into consideration both the specific contact resistance, ρ c , and the average optical transmittance, T ave [19,20]:…”

In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin-Film Photovoltaics

“…Other factors arise from the challenges of depositing thin films over large area (∼ m 2 ) substrates in TFPV module manufacturing. These include film thickness variation over large area substrates [8], variation of contact sheet resistance [9], composition variations in chalcogenide cells [10]. These manufacturing challenges not only reduce the module efficiency, but also lead to performance variation at the module level, causing reduced process yield.…”