Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

Abstract

Postgrowth annealing was carried out to investigate the photoluminescence of zinc oxide (ZnO) nanorods synthesized using a thermal chemical vapor deposition method. The observed change in photoluminescence after the annealing processes strongly suggests that positively charged impurity ions or interstitial Zn ions are the recombination centers for green luminescence observed in the present sample. A model based on the interplay between the band bending at the surface and the migration of positively charged impurity ions or Zn ions was proposed, which satisfactorily explains the observed photoluminescence.

ZnO nanocoral reef grown on porous silicon substrates without catalyst

“…Wang et al [26], pointed out that, through the surface band bending, the chemisorbed oxygen played a crucial role in the recombination process of the green emission. Equivalently important is the concentration and the spatial distribution of the defect states, at which the recombination process of the green emission takes place.…”

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

“…Several authors have reported the use of photoluminescence spectroscopy to study the role of the defects and impurities in ZnO. However, even with the same experimental conditions they have reported contradictory results [17]. Therefore, since the impurities and defects are highly dependent on the deposition technique and its conditions, their role in the electronic properties of ZnO is still controversial.…”

“…The broad band from 450 to 700 nm (visible emission) is typically associated with the impurities and defects, which are considerable in our case. The origin of this visible emission band has been related to zinc and oxygen vacancies, zinc and oxygen antisites, and to zinc and oxygen interstitials [16,17]. Several authors have reported the use of photoluminescence spectroscopy to study the role of the defects and impurities in ZnO.…”

Resistivity Stability of Ga Doped ZnO Thin Films with Heat Treatment in Air and Oxygen Atmospheres

“…Consequently, there is a decrease in non-radiative recombination and increase in radiative recombination for non-equilibrium photogenerated carriers [48]. According to Wang et al [49], the enhancement in green emission is attributed to the chemisorptions of oxygen. However, in our case the intensity of other emission peaks also increased after annealing.…”