Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots

Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

“…Whether intermixing of Al is a factor of importance in the formation of GaAs/AlGaAs QDs grown by droplet epitaxy is a question frequently raised in the literature [19][20][21]. In all QDs imaged we have observed some degree of intermixing.…”

Shape and Size Dependent Electronic Properties of GaAs/AlGaAs Quantum Dots

“…The electronic structure of the QD can be manipulated by varying the shape, size, and number of electrons associated with it. Size and shape anisotropies play key role in determining the GaAs/AlGaAs quantum dots can be fabricated using various techniques like metal organic chemical vapour deposition [5], modified droplet epitaxy [6], etc.…”

Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

“…The inner ring in T-CQRs showed nearly the same diameter to that of the original Ga droplet and the density of the T-CQRs structures was equal to that of the original droplets, confirming that all Ga droplets transformed into GaAs triple rings at the end of the procedure. The ensemble optical emission of T-CQR structures embedded in a Al 0.3 Ga 0.7 As matrix and annealed in As atmosphere at 650 • C for crystalline quality recovery [12][13][14], is shown in 2a. The photoluminescence was measured at T = 15 K and excited in the Al 0.3 Ga 0.7 As barrier with a green laser (λ exc = 532 nm) at an excitation power density P exc =10 W/cm 2 .…”

“…[12] within the effective mass approximation. We used the same materials parameters reported in Ref.…”