Effects of Plasma-$\hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ nMOSFETs

Indium diffusion through high-k dielectrics in high-k/InP stacks

“…26 This indium out-diffusion is possibly driven by a relatively lower surface energy of In-oxide with respect to the high-k oxides. Oh et al 28 and Suleiman et al 29 reported a stable monolayer of P x N y (self-limiting growth by plasma-PH 3 treatment) on InGaAs prior to ALD, which significantly improves the thermal stability of the high-k/InGaAs interface, indicating it is possible to utilize a P x N y layer to isolate the In atoms from high-k oxide. Hence, this may reduce the In outdiffusion upon annealing.…”