Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates

Wang, L. S.; Zang, K. Y.; Tripathy, S.; Chua, Soo-Jin

doi:10.1063/1.1832758

Cited by 54 publications

(27 citation statements)

References 25 publications

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“…5 Thus, precise phonon deformation potentials (PDPs), which relate Raman shift or split to stress, 6 are required. Although theoretical 7,8 and experimental works 7,[9][10][11][12][13][14][15] were reported, there is a considerable discrepancy among the reported figures. 9,10,16 This might be due to the conventional comparative experimental methodology, 14 which always faces the challenge of preparing GaN samples with a large range of biaxial stress.…”

Section: Introductioncontrasting

confidence: 40%

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Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Deng

Wang

et al. 2011

AIP Advances

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In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of $E_2^H$E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

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Section: Introductioncontrasting

confidence: 40%

“…11 For the A 1 (LO) phonon mode,K B was only experimentally calibrated a few times. The present value of 2.34cm -1 /GPa is closer to our previously reported value (2.76cm -1 /GPa).…”

Section: Resultsmentioning

confidence: 99%

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Deng

Wang

et al. 2011

AIP Advances

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“…It has been demonstrated that the annihilation of threading dislocation during growth helps to relieve tensile stress of GaN film [7]. Pakula et.…”

Section: -10mentioning

confidence: 99%

GaN growth on silane exposed AlN seed layers

Ruiz-Zepeda

Contreras

Dadgar

et al. 2008

Phys. Status Solidi (c)

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The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon (111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH4 exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH4 exposure time between 75‐90 sec. At this optimal condition a step‐flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiNx masking. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The E 2 -high mode for sample A is 563.73 cm −1 while for sample B, it is shifted to 564.5 cm −1 . Compared with the standard value of 567.5 cm −1 for bulk GaN [5,7], the E 2 -high peaks for both samples show redshifts with respect to that of bulk GaN. Because of the lattice and the thermal mismatch, the GaN epilayer is subjected to a biaxial tensile stress when grown pseudomorphically on silicon (111) substrates.…”

Section: Methodsmentioning

confidence: 99%

“…Considerable efforts have been made to reduce the dislocation density and the residual strain to improve the crystalline quality of GaN samples deposited on silicon substrates. Silicon delta-doping, epitaxial lateral overgrowth, and substrate engineering have been proposed to improve the crystalline growth [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate

Hang¹,

Chou²,

Hsieh³

et al. 2007

J. Korean Phys. Soc.

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We study the influence of a buffer layer on the optical properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrates by using metalorganic vapor phase epitaxy. To overcome the large lattice mismatch and the difference in the thermal expansion coefficients by which a high dislocation density occurs, we grow the MQWs on an advanced buffer structure consisting of low-temperature (LT) AlN and a high-temperature (HT) AlN/AlGaN/GaN stack. The Raman spectra confirm that the biaxial tensile strain is reduced by the insertion of the alternating LT and HT buffer layers. Moreover, we find the room-temperature internal quantum efficiency can be improved. Our results suggest that the enhanced optical performance comes from the reduced number of nonradiative recombination centers brought about by the LT and HT composite buffer layers.

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Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates

Cited by 54 publications

References 25 publications

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

GaN growth on silane exposed AlN seed layers

Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate

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