Effects of pad properties on material removal in chemical mechanical polishing

Park, K.H.; Kim, H.J.; Chang, O.M.; Jeong, Haedo

doi:10.1016/j.jmatprotec.2006.11.216

Cited by 92 publications

(59 citation statements)

References 2 publications

(2 reference statements)

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“…Fig. 2 (b) represents the asperities, which are gradually worn out and flattened from the highest level by the slurry particles as the CMP process goes by [8,9]. This phenomenon caused a change in the formation of the surface height distribution as shown in Fig.…”

Section: Variation Of the Pad Surface During The Cmpmentioning

confidence: 99%

“…This is applicable to the CMP process, then the peak region is asperities that take main part of the polishing process, the core region supports the applied load, and the valley region carries slurry into the gap between the pad and the wafer. Park et al, have pointed out that, the R pk , the reduced peak height, is closely related with the material removal in CMP [9]. Focused on this, a simplification model of microtopography on the CMP pad is presented as shown in Fig.…”

Section: New Approach To the Pad Surfacementioning

confidence: 99%

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Prediction of Real Contact Area from Microtopography on CMP Pad

Jeong

Lee

Choi

et al. 2012

JAMDSM

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A simplified model related to microtopography on CMP pad and prediction of real contact area between the pad and wafers is presented in this paper. The model has been developed on the basis of the analysis of the pad surface roughness and contact mechanics. The bearing area curve, representing tribological properties of the surface, is used to formulate the model. The pad microtopography which is expressed in the model is uniform and simple. Particularly, the important characteristics of the pad microtopography for the CMP process are emphasized in the model. It provides more convenient way to perceive the situation of the pad surface during the CMP process. The progress of the pad surface wear and the real contact area can be easily taken and connected each other by using the model. The model is also verified by comparing the tendency of actual removal rates with those theoretically anticipated. Finally, authors could get the efficient link between the pad surface wear and the real contact area, which results in a strong tool to understand the fundamental CMP mechanism of material removal.

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Section: Variation Of the Pad Surface During The Cmpmentioning

confidence: 99%

Section: New Approach To the Pad Surfacementioning

confidence: 99%

Prediction of Real Contact Area from Microtopography on CMP Pad

Jeong

Lee

Choi

et al. 2012

JAMDSM

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“…Moreover, longer break-in times have been generally shunned since they reduce pad life, tool availability, and the overall wafer throughput in high-volume IC manufacturing environments. Several other groups of researchers have reported similar 30-min experimental conditions where a stable pad micro-texture has been achieved only after 30 min of break-in [4,7,8]. Therefore, pad break-in is performed for 5, 20 and 30 min with UPW flowing onto the centre of the rotating pad.…”

Section: Experimental Apparatus and Proceduresmentioning

confidence: 90%

“…Borucki et al [3] also proposed a statistical model to describe the evolution of pad surface, as measured by asperity heights, during the pad conditioning. Park et al [4] demonstrated that a certain pad roughness measure (i.e. reduced peak height R pk ) increased during a 30-min breakin process which in turn increased interlayer dielectric (ILD) removal rate.…”

Section: Introductionmentioning

confidence: 99%

Feasibility of a Real-Time Method in Determine the Extent of Pad Break-In During Copper Chemical Mechanical Planarization

2016

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Material removal rate, shear force and variance of shear force during copper polishing are studied as a function of pad break-in time. Results show that copper removal rate and variance of shear force increase within 30 min of pad break-in. Spectral analysis of raw shear force data is employed to help elucidate the fundamental physical phenomena during copper chemical mechanical planarization. Fast Fourier transform is performed to convert the shear force data from time domain to frequency domain. The energy distribution of copper polishing is quantified which sheds light on the effect of pad break-in time. Spectral analysis indicates that as pad break-in progresses, newly formed pad asperities dominate the interaction with the wafer and therefore shifting the spectral amplitudes to the higher frequency peaks (i.e. 101-108 Hz). Further spectral analysis also confirms that such increases in the high-frequency range dominate the distribution of energies. This study shows that a combination of unique spectral fingerprinting and analysis of force variance can be used to monitor the progress of pad break-in in real-time. This work underscores the importance of real-time detection and non-destructive method in chemical mechanical planarization process to quantify the extent of pad break-in.

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“…For example, MRR increases with the pad surface roughness [25]. Yu et al [26] considered the effect of pad surface roughness and the interaction between the pad and wafer with the contact area.…”

Section: Modeling Of Chemical Mechanical Planarizationmentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Effects of pad properties on material removal in chemical mechanical polishing

Cited by 92 publications

References 2 publications

Prediction of Real Contact Area from Microtopography on CMP Pad

Prediction of Real Contact Area from Microtopography on CMP Pad

Feasibility of a Real-Time Method in Determine the Extent of Pad Break-In During Copper Chemical Mechanical Planarization

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

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