Effects of oxygen stoichiometry on resistive switching properties in amorphous tungsten oxide films

Jang, Byeonguk; Inamdar, Akbar I.; Kim, Jongmin; Jung, Woo Young; Im, Hyunsik; Kim, Hyungsang; Hong, Jin Pyo

doi:10.1016/j.tsf.2012.03.111

Cited by 17 publications

(10 citation statements)

References 19 publications

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“…I-V curves with uniform and low set/reset voltages are shown for up to 1500 DC sweeps. This large number of DC cycles is comparable to that of previously reported WO X ReRAM 1 , 8 , 13 , 18 , 25 – 27 . It can be seen that the current which flows when a negative voltage is applied is suppressed but when a positive voltage is applied, a high current flows, in the same way as in a rectification diode.…”

Section: Resultssupporting

confidence: 88%

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

Won

Lee

Park

et al. 2017

Sci Rep

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Resistive switching devices are recognized as candidates for next-generation memory devices in that they can replace conventional memory devices. In these devices, a WOX film deposited by RF magnetron sputtering with a significant number of oxygen vacancies exhibits a resistive switching property and does not involve the use of a forming process. The resistive switching mechanism involves the hopping of electrons through the sub-band states of the oxygen vacancies in E-field-driven electromigration. X-ray photoemission spectroscopy, ultra-violet photoemission spectroscopy, and transmission electron microscopy-electron energy loss spectroscopy were performed to analyze local variations in the O-vacancies and in the electronic band structure of a WOX thin film. The band structure is responsible for the correlation between the motion of the electrons under the interface effect at the electrodes with the change in the resistance and the bias-polarity dependence of the I-V property of the device. The optimized metal-insulator-metal structure (Pt/WOX/Au), which has an asymmetric electrode and many oxygen vacancies, gives rise to excellent resistive-switching properties with a high on/off ratio on the order of 105 times, a low set voltage of <0.34 V, and a uniform DC cyclic performance in the order of 1500 cycles at room temperature. These specifications can be further adopted for application to non-volatile memory-device applications.

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Section: Resultssupporting

confidence: 88%

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

Won

Lee

Park

et al. 2017

Sci Rep

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“…The observed unipolar switching behavior in our binary oxide devices is well described by the metallic filament model 26 27 28 . The physical formation of the metallic filament in binary oxides has been directly identified by ourselves 19 29 30 and other groups 31 32 .…”

Section: Resultsmentioning

confidence: 93%

Switching Power Universality in Unipolar Resistive Switching Memories

Kim

Jung

Kim

et al. 2016

Sci Rep

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We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R−β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

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“…[http://dx.doi.org/10.1063/1.4884303] Electrically induced resistive switching phenomena between two different resistance states, a high resistance state (HRS) and a low resistance state (LRS), is often observed in various metal-I-metal structures, in which the "I" layer ranges from the insulating metal oxides, [1][2][3][4] to more complex materials, [5][6][7][8][9][10][11] such as organic matter. 12,13 Besides their intriguing physics, this phenomenon has attracted considerable attention in the memory industry due to its potential application in next-generation nonvolatile memories, which are often abbreviated as ReRAM or RRAM.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Kim

Lee

et al. 2014

AIP Advances

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A transparent polymer-based resistive switching device containing In2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.

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Effects of oxygen stoichiometry on resistive switching properties in amorphous tungsten oxide films

Cited by 17 publications

References 19 publications

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

Switching Power Universality in Unipolar Resistive Switching Memories

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

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