“…This mismatch in work functions, called the hole injection barrier, is directly associated with the efficiency of devices incorporating HTLs and ITO. Work functions of clean native ITO can vary from 4.2 to 5.1 eV, depending on the procedures used to clean the surfaces and prepare the ITO films. − ,− With the clean native ITO, high work functions are achieved through the polar oxo and hydroxyl surface functional groups, which are often created through specific treatments that include oxygen plasma, ultraviolet (UV) ozone, or Radio Corporation of America standard cleaning procedures (e.g., RCA-1). ,, These surface functional groups are, however, not well-suited for direct contact with the HTL found in many organic-based electronics, because the polar groups of the native ITO surfaces exhibit an incompatibility due to their high surface energy. ,, These surfaces also undergo rapid changesincluding loss of surface hydroxyls and polar oxo groupsunder ambient conditions, which results in a decrease in the work function . This incompatibility at the interface between the ITO and the HTL leads to a nonuniform wetting of the organic films, and subsequent changes to the interface can lead to delamination of the HTL.…”