Effects of oxygen plasma generated in magnetron sputtering of ruthenium oxide on pentacene thin film transistors

Lee, Taehyung; Lim, Boram; Yong, Kijung; Kwon, Woosung; Park, Minwoo

doi:10.1007/s11814-017-0142-x

Cited by 3 publications

(3 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2017, Lee et al [ 24 ] studied the effects of the oxygen plasma flow rate generated during magnetron sputtering of ruthenium oxide (RuO x ) on pentacene-based OTFTs. For this, different device structures were used, including bottom contact (BC) ( Figure 9 a,c) and top contact (TC) ( Figure 9 b,d) devices.…”

Section: Thermal Vacuum Evaporation Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

et al. 2022

View full text Add to dashboard Cite

Pentacene is a well-known conjugated organic molecule with high mobility and a sensitive photo response. It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors, and smart sensors. With the development of flexible and wearable electronics, the deposition of good-quality pentacene films in large-scale organic electronics at the industrial level has drawn more research attention. Several methods are used to deposit pentacene thin films. The thermal evaporation technique is the most frequently used method for depositing thin films, as it has low contamination rates and a well-controlled deposition rate. Solution-processable methods such as spin coating, dip coating, and inkjet printing have also been widely studied because they enable large-scale deposition and low-cost fabrication of devices. This review summarizes the deposition principles and control parameters of each deposition method for pentacene and its derivatives. Each method is discussed in terms of experimentation and theory. Based on film quality and device performance, the review also provides a comparison of each method to provide recommendations for specific device applications.

show abstract

Section: Thermal Vacuum Evaporation Methodsmentioning

confidence: 99%

“…It also significantly improved the stability issues against oxygen. However, this method has also shown degradation towards UV light, even without the presence of oxygen [ 24 , 25 , 26 , 27 ]. Additionally, the derivatives have an unfavorable influence on the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Based on the split results in Figure 7c, we compared the via resistance values between the conditions expected to be the most suitable for the 015 logic via barrier and the other existing conditions. The optimal conditions were selected as RF etching 200 [47], IMP Ti 200, and CVD TiN 2 × 50 Å. The results show that the obtained via resistance is less than approximately 5 kW, and the distribution of resistance is very good.…”

Section: Electrical Characteristics Of Via Structurementioning

confidence: 99%

Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices

et al. 2019

View full text Add to dashboard Cite

This paper reports on the optimization of the device and wiring in a via structure applied to multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the Tungsten (W) plug process of the logic device by following the most optimized barrier deposition scheme of RF etching 200 Å IMP Ti (ion metal plasma titanium) 200 Å CVD TiN (titanium nitride deposited by chemical vapor deposition) 2 × 50 Å. The resistivities of the glue layer and barrier, i.e., IMP Ti and CVD TiN, were 73 and 280 μΩ·cm, respectively, and the bottom coverages were 57% and 80%, respectively, at a 3.2:1 aspect ratio (A/R). The specific resistance of the tungsten film was approximately 11.5 μΩ·cm, and it was confirmed that the via filling could be performed smoothly. RF etching and IMP Ti should be at least 200 Å each, and CVD TiN can be performed satisfactorily with the existing 2 × 50 Å process. Tungsten deposition showed no difference in the via resistance with deposition temperature and SiH4 reduction time. When the barrier scheme of RF etching 200 Å IMP Ti 200 ÅCVD TiN 2 × 50 Å was applied, the via resistance was less than 20 Ω, even with a side misalignment of 0.05 μm and line-end misalignment of ~0.1 μm.

show abstract

Atmospheric-pressure floating electrode-dielectric barrier discharge with flexible electrodes: Effect of conductor shapes

Kim

Park

Shin

et al. 2019

Korean J. Chem. Eng.

View full text Add to dashboard Cite

Effects of oxygen plasma generated in magnetron sputtering of ruthenium oxide on pentacene thin film transistors

Cited by 3 publications

References 25 publications

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices

Atmospheric-pressure floating electrode-dielectric barrier discharge with flexible electrodes: Effect of conductor shapes

Contact Info

Product

Resources

About