Effects of Oxygen Flux on the Aluminum Doped Zinc Oxide Thin Films By Direct Current Magnetron Sputtering

Li, L.N.; Zhao, Youbo; Chen, X.L.; Sun, Junli; Zhang, X.D.

doi:10.1016/j.phpro.2012.03.619

Cited by 8 publications

(1 citation statement)

References 13 publications

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“…A decrease in the sheet resistances of the AZO thin films is observed for thickness ranges from 487 to 634 nm. Therefore, a corresponding decrease in the resistivity is partly due to the presence of defects and majorly to Al dopants located as interstitial atoms and hence substitute Zn, and filling Oxygen vacancies [24]. This may be due to the donor states created as a result of the Al 3+ ions impurity introduced in the ZnO lattice structure, producing in all cases an n-type semiconductor [4].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors

Akinwunmi¹,

Ogundeji²,

Famojuro³

et al. 2018

JMP

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Zinc Oxide (ZnO) and Aluminium doped ZnO (AZO) thin films were deposited on soda lime glass by Metal Organic Chemical Vapour deposition technique (MOCVD), using prepared compound mixtures of Zinc Acetate di-hydrate (Zn(CH 3 COO) 2 •2H 2 O; ZAD) and Aluminium Acetyl-Acetonate (Al(C 5 H 7 0 2) 3 ; AAA) precursors at a temperature of 420˚C. Effects of the varying mole percent concentrations of AAA precursor additives on the Al dopant concentrations in ZnO were systematically studied. The observations were made via investigations carried out on the morphological, optical, electrical and compositional properties of the deposited thin films. The thin films morphology was found to be strongly dependent on the varying concentration of AAA in the precursor mixtures. The average optical transmittance of the thin films in the uv-visible region was over 85% except 5 mol.% Al. While the energy band gaps were found to be in range of 3.27-3.36 eV. There is a blue-shift of the energy band edge observed between 0 and 5 mol.% AAA, which may be due to Burstein-Moss' band gap widening effect and an opposing band gap renormalization effect at 10 mol.% AAA along with an extra band gap stabilization effect (Roth's effect) at 15 mol.% AAA in rather quasi-sinusoidal or anomalous behaviour. The optical transmittance and electrical conductivity of ZnO were enhanced with addition of Al dopants. The RBS confirm the presence of Al, Zn and O, and evidence that Al dopants were successfully incorporated into the ZnO.

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Section: Electrical Propertiesmentioning

confidence: 99%

Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors

Akinwunmi¹,

Ogundeji²,

Famojuro³

et al. 2018

JMP

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Improving Long‐Term Stability of Kesterite Thin‐Film Solar Cells with Oxide/Metal/Oxide Multilayered Transparent Conducting Electrodes

et al. 2023

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The long‐term stability of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) thin‐film solar cells (TFSCs) is crucial for the sustainable mass production of photovoltaic systems. Herein, the improved long‐term stability of CZTSSe TFSCs with an oxide/metal/oxide (OMO)‐based transparent conducting electrodes (TCEs), i.e., ZnO‐based oxide/Ag/Al‐doped ZnO (AZO), and post heating treatment is reported. The effect of the structural, optical, and electrical properties of the OMO TCEs prepared with various bottom oxide materials on the device performance of the CZTSSe TFSCs is systematically investigated. The CZTSSe TFSCs with Ga‐doped ZnO containing OMO TCEs show excellent long‐term stability with only <1% and <20% power conversion efficiency (PCE) losses, whereas for the TFSCs with conventional AZO TCEs, 12% and 69% PCE losses are observed after 5 and 10 months, respectively, without encapsulation and air atmosphere. Detailed analyses reveal that Ag‐doped ZnO formed at the bottom oxide/Ag interface in OMO TCEs passivates the interface. Accordingly, a passivation mechanism for the Ag‐doped ZnO interfacial layer in the OMO TCEs is demonstrated. Herein, a new pathway to improve the long‐term stability of CZTSSe TFSCs without encapsulation and under air atmosphere is offered.

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Processing optimization of SiO2-capped aluminum-doped ZnO thin films for transparent heater and near-infrared reflecting applications

Can

Tönbül

Pişkin

et al. 2021

J Mater Sci: Mater Electron

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Effects of Oxygen Flux on the Aluminum Doped Zinc Oxide Thin Films By Direct Current Magnetron Sputtering

Cited by 8 publications

References 13 publications

Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors

Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors

Improving Long‐Term Stability of Kesterite Thin‐Film Solar Cells with Oxide/Metal/Oxide Multilayered Transparent Conducting Electrodes

Processing optimization of SiO2-capped aluminum-doped ZnO thin films for transparent heater and near-infrared reflecting applications

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