Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study

Abstract

Articles you may be interested inEffect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxidesemiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study Appl. Phys. Lett. 105, 113511 (2014); 10.1063/1.4896157Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native Si O 2 on silicon on insulator Effects of in situ pyrolytic-gas passivation on reliability of ultrathin silicon oxide gate films